CY7C1215F-133AC CYPRESS [Cypress Semiconductor], CY7C1215F-133AC Datasheet - Page 8

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CY7C1215F-133AC

Manufacturer Part Number
CY7C1215F-133AC
Description
1-Mb (32K x 32) Pipelined Sync SRAM
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
Document #: 38-05421 Rev. **
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in Three-State ..................................... –0.5V to V
DC Input Voltage....................................–0.5V to V
Electrical Characteristics
V
V
V
V
V
V
I
I
I
I
I
I
I
Notes:
Parameter
X
OZ
DD
SB1
SB2
SB3
SB4
8. Overshoot: V
9. T
DD
DDQ
OH
OL
IH
IL
Power-up
: Assumes a linear ramp from 0v to V
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current ex-
cept ZZ and MODE
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage Current GND ≤ V
V
Current
Automatic CS
Power-down
Current—TTL Inputs
Automatic CS
Power-down
Current—CMOS Inputs
Automatic CS
Power-down
Current—CMOS Inputs
Automatic CS
Power-down
Current—TTL Inputs
IH
DD
(AC) < V
Operating Supply
Description
DD
DD
Relative to GND........ –0.5V to +4.6V
+1.5V (Pulse width less than t
[8]
[8]
Over the Operating Range
V
V
V
V
GND ≤ V
Input = V
Input = V
Input = V
V
f = f
V
V
f = f
V
V
f = 0
V
V
f = f
V
V
DD
DDQ
DDQ
DDQ
DDQ
DD
DD
IN
DD
IN
DD
IN
DD
IN
(min.) within 200 ms. During this time V
MAX
MAX
MAX
≥ V
≤ 0.3V or V
≤ 0.3V or V
≥ V
= Max, Device Deselected, or
= Max., I
= Max, Device Deselected,
= Max, Device Deselected,
= Max, Device Deselected,
= 3.3V, V
= 3.3V, V
= 3.3V
= 3.3V
IH
IH
= 1/t
= 1/t
= 1/t
CYC
I
I
SS
DD
SS
DD
or V
or V
≤ V
≤ V
DDQ
DD
/2), undershoot: V
CYC
CYC
CYC
OUT
DDQ
DDQ,
IN
IN
+ 0.5V
+ 0.5V
DD
DD
IN
IN
≤ V
≤ V
= 0 mA,
> V
> V
= Min., I
= Min., I
Output Disabled
IL
IL
Test Conditions
DDQ
DDQ
, f = 0
[8, 9]
– 0.3V,
– 0.3V
IL
OH
OL
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
(AC) > –2V (Pulse width less than t
Commercial
= 8.0 mA
= –4.0 mA
Range
IH
6-ns cycle,166 MHz
7.5-ns cycle, 133 MHz
6-ns cycle,166 MHz
7.5-ns cycle, 133 MHz
All speeds
6-ns cycle,166 MHz
7.5-ns cycle, 133 MHz
All speeds
< V
DD
and V
Temperature
0°C to +70°C
DDQ
Ambient
< V
DD
.
CYC
/2).
3.135
3.135
Min.
–0.3
–30
2.4
2.0
–5
–5
–5
–5%/+10%
3.3V
V
CY7C1215F
DD
V
DD
Max.
V
240
225
100
3.6
0.4
0.8
30
90
40
85
75
45
+ 0.3V
5
5
5
DD
Page 8 of 16
3.3V –5%
to V
V
DDQ
DD
Unit
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V

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