CAT24WC08 CATALYST [Catalyst Semiconductor], CAT24WC08 Datasheet - Page 2

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CAT24WC08

Manufacturer Part Number
CAT24WC08
Description
1K/2K/4K/8K/16K-Bit Serial EEPROM
Manufacturer
CATALYST [Catalyst Semiconductor]
Datasheet

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Temperature Under Bias ................. –55°C to +125°C
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
V
Package Power Dissipation
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to V
(5) Maximum standby current (I
V
Doc. No. 1022, Rev. N
CC
CC
N
T
V
I
LTH
voltage on output pins is V
and JEDEC test methods.
Respect to Ground
Capability (Ta = 25°C) ................................... 1.0W
I
DR
V
V
ZAP
C
C
END
SB
with Respect to Ground ............... –2.0V to +7.0V
V
= +1.8V to +5.5V, unless otherwise specified.
I
I
V
I
CC
LO
OL1
OL2
I/O
IN
LI
IH
IL
(3)
(3)(4)
(5)
(3)
(3)
(3)
(3)
Input/Output Capacitance (SDA)
Input Capacitance (A0, A1, A2, SCL, WP)
Power Supply Current
Standby Current (V
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage (V
Output Low Voltage (V
Endurance
Data Retention
ESD Susceptibility
Latch-up
T
A
= 25°C, f = 1.0 MHz, V
(1)
CC
........... –2.0V to +V
SB
+0.5V, which may overshoot to V
) = 10µA for the Automotive and Extended Automotive temperature range.
(2)
........................ 100mA
CC
= 5.0V)
CC
CC
= 3.0V)
= 1.8V)
CC
CC
= 5V
+ 2.0V
V
CC
1,000,000
–1
x 0.7
CC
2000
100
100
+ 2.0V for periods of less than 20ns.
2
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
reliability.
8
6
V
V
CC
CC
0.4
0.5
10
10
3
1
x 0.3
+ 0.5
pF
pF
CC
+1V.
Characteristics subject to change without notice
mA
µA
µA
µA
V
V
V
V
© 2005 by Catalyst Semiconductor, Inc.
V
Cycles/Byte
V
V
OUT
f
IN
IN
SCL
Years
V
I
V
Volts
OL
I
mA
= GND or V
= GND to V
I/O
OL
IN
= GND to V
= 100 KHz
= 1.5 mA
= 0V
= 0V
= 3 mA
CC
CC
CC

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