AD5113 AD [Analog Devices], AD5113 Datasheet - Page 4

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AD5113

Manufacturer Part Number
AD5113
Description
Manufacturer
AD [Analog Devices]
Datasheet

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Part Number:
AD5113BCPZ80-500R7
Quantity:
507
AD5116
Parameter
POWER SUPPLIES
DYNAMIC CHARACTERISTICS
FLASH/EE MEMORY RELIABILITY
1
2
3
4
5
6
7
8
9
10
11
12
Typical values represent average readings at 25°C, V
Resistor position nonlinearity error (R-INL) is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. The maximum wiper current is limited to 0.8 × V
Guaranteed by design and characterization, not subject to production test.
INL and DNL are measured at V
of ±1 LSB maximum are guaranteed monotonic operating conditions.
Resistor Terminal A, Resistor Terminal B, and Resistor Terminal W have no limitations on polarity with respect to each other.
C
Different from operating current; supply current for NVM program lasts approximately 30 ms.
Different from operating current; supply current for NVM read lasts approximately 20 µs.
P
derates with junction temperature in the Flash/EE memory.
All dynamic characteristics use V
Endurance is qualified at 100,000 cycles per JEDEC Standard 22, Method A117 and measured at 150°C.
Retention lifetime equivalent at junction temperature (T
A
DISS
Single-Supply Power Range
Positive Supply Current
EEMEM Store Current
EEMEM Read Current
Power Dissipation
Power Supply Rejection
Bandwidth
Total Harmonic Distortion
V
Resistor Noise Density
Endurance
Data Retention
is measured with V
W
is calculated from (I
Settling Time
11
12
W
9
= V
DD
3
3
, 8
× V
A
, 7
= 2.5 V, C
3
DD
WB
3
).
, 10
DD
with the RDAC configured as a potentiometer divider similar to a voltage output DAC. V
3
= 5.5 V, and V
B
is measured with V
LOGIC
Symbol
I
I
I
P
PSR
BW
THD
t
e
DD
DD_NVM_STORE
DD_NVM_READ
DD
s
N_WB
DISS
= 5 V.
= 5 V, V
J
) = 125°C per JEDEC Standard 22, Method A117. Retention lifetime based on an activation energy of 1 eV
W
= V
SS
B
= 0 V, and V
= 2.5 V, and C
Rev. 0 | Page 4 of 16
LOGIC
Test Conditions/Comments
V
V
∆V
R
R
R
Code = half scale − 3 dB
R
R
R
V
f = 1 kHz, code = half scale
R
R
R
V
band
R
R
R
Code = half scale, T
f = 100 kHz
R
R
R
T
W
AB
AB
AB
AB
AB
AB
AB
AB
AB
AB
AB
AB
AB
AB
AB
A
DD
IH
A
A
is measured with V
= 5 V.
= 25°C
DD
= V
= 5 V, V
= V
= 5 kΩ
= 80 kΩ
= 5 kΩ
=10 kΩ
= 80 kΩ
= 5 kΩ
= 10 kΩ
= 80 kΩ
= 10 kΩ
= 5 kΩ
= 10 kΩ
= 80 kΩ
= 5 kΩ
= 10 kΩ
= 80 kΩ
= 5 V
/∆V
DD
LOGIC
/2 + 1 V rms, V
SS
= 5 V ± 10%
B
or V
= 0 V, ±0.5 LSB error
IL
= GND
A
A
= V
= 25°C,
B
B
= V
= 2.5 V.
DD
/2,
Min
2.3
100
A
= V
DD
and V
Typ
750
2
320
5
−43
−50
−64
4
2
200
−75
−80
−85
2.5
3
10
7
9
20
1
50
B
= 0 V. DNL specification limits
1
Max
5.5
Data Sheet
DD
/R
AB
.
Unit
V
nA
mA
µA
µW
dB
dB
dB
MHz
MHz
kHz
dB
dB
dB
µs
µs
µs
nV/√Hz
nV/√Hz
nV/√Hz
MCycles
kCycles
Years

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