SA5222D PHILIPS [NXP Semiconductors], SA5222D Datasheet - Page 2

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SA5222D

Manufacturer Part Number
SA5222D
Description
Low-power FDDI transimpedance amplifier
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SA5222D
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
1. Bandwidth is tested into 50 load. Bandwidth into 1k load is approximately 165MHz.
2. Does not include Miller-multiplied capacitance of input device.
3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in V
4. Monitored in production via linearity and over load tests.
Philips Semiconductors
DC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at T
AC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at T
NOTES:
1995 Apr 26
SYMBOL
SYMBOL
SYMBOL
SYMBOL
Low-power FDDI transimpedance amplifier
V
I
PSRR
PSRR
I
I
INMAX
INMAX
OMAX
V
V
OMAX
f
R/ V
V
R
C
R/ T
t
I
R
R
R
R
3dB
I
I
CC
r
t
I
I
I
I
OS
IN
IN
, t
O
T
T
T
T
D
IN
IN
IN
O
O
T
T
f
Input bias voltage
Output bias voltage
Output offset voltage
Supply current
Output sink/source current
Input current (2% linearity)
Maximum input current overload threshold
Maximum differential output voltage swing
Transresistance (differential output)
Output resistance
(differential output)
Transresistance
(single-ended output)
Output resistance
(single-ended output)
Bandwidth (-3dB)
Input resistance
Input capacitance
Transresistance power supply sensitivity
Transresistance ambient temperature sensi-
tivity
RMS noise current spectral density (referred
to input)
Integrated RMS noise current over the band-
width (referred to input)
C
C
Power supply rejection ratio
Power supply rejection ratio
Maximum input amplitude for output duty
cycle of 50 5%
Rise and fall times
Group delay
S
S
= 0pF
= 1pF
PARAMETER
PARAMETER
PARAMETER
PARAMETER
4
1
2
3
A
A
= 25 C, and V
= 25 C and V
CC1
CC1
R
DC tested, R
L
= , Test Circuit 5, Procedure 3
= V
= V
Test circuit 5, Procedure 2
Test circuit 5, Procedure 4
DC Tested, V
f = 1.0MHz, Test Circuit 3
Test Circuit 2, f = 10MHz
V
CC2
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
CC1
CC2
T
DC tested, R
2
A
Test Circuit 1
Test circuit 2,
=+5V, unless otherwise specified.
= T
Procedure 1
Test circuit 4
= V
= +5V, unless otherwise specified.
DC tested
DC tested
f = 10MHz
10 – 90%
f = 50MHz
f = 100MHz
f = 150MHz
f = 50MHz
f = 100MHz
f = 150MHz
L
A MAX
CC2
=
,
CC
= 5 0.5V
Test Circuit 5,
- T
L
= 0.5V
=
A MIN
13.3
6.65
Min
Min
110
1.3
2.9
1.5
30
15
6
60
80
SA5222
SA5222
1.55
16.6
0.07
Typ
Typ
140
150
–55
–34
3.2
3.6
8.3
1.0
2.0
2.2
2.2
60
30
15
25
36
17
35
55
120
115
0
9
2
90
1
Max
Max
19.9
9.95
1.8
3.5
100
12
90
45
Product specification
SA5222
pA
UNIT
UNIT
UNIT
UNIT
%/
CC
V
MHz
%/V
mV
mA
mA
k
k
nA
nA
nA
nA
dB
dB
pF
ns
ns
V
V
P-P
A
A
A
o
line.
C
Hz

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