SA5222D PHILIPS [NXP Semiconductors], SA5222D Datasheet - Page 4

• Manufacturer Part Number: SA5222D
• Description: Low-power FDDI transimpedance amplifier
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
TEST CIRCUITS
TEST CIRCUITS
1995 Apr 26
Low-power FDDI transimpedance amplifier
Procedure 1 R
Procedure 3
(continued)
(continued)
R
Where:
V
Where:
T
T
OMAX
–0.45
–0.90
–1.35
–1.80
–2.25
measured at 30 A
= (V
2.25
1.80
1.35
0.90
0.45
0.00
O1
–200
PULSE GEN
= V
I
IN ( A)
- V
O7
V
V
V
V
O2
O1
O2
O7
O8
- V
) / (+30 A - (-30 A)
–160
0.1uF
Measure at I
Measured at I
Measured at I
Measured at I
O8
OFFSET
50
V
O8
1k
Test Circuit 4: Duty Cycle Distortion
–120
IN
SA5222 TEST CONDITIONS
IN
IN
IN
GND
V
= +30 A
Typical V
GND
= -30 A
= +130 A
= -130 A
O6
Test Circuit 5: DC Tests
IN
1
Figure 5. Test Circuit4
Figure 6. Test Circuit5
V
–80
O4
1
DUT
5V
5V
V
OUT +
OUT –
O2
O
OUT
OUT
–40
GND
CURRENT INPUT ( A)
(Differential) vs I
GND
V
S
4
O
2
2
1k
1k
0
V
Procedure 2
Procedure 4
O1
.1 F
.1 F
V
3
40
O
V
5
IN
O
Linearity = 1 - ABS((V
Where:
I
V
Where:
INMAX
O7
80
- V
Meaurement done using
differential wave forms
O5
+
–
Test Pass Conditions:
A
B
V
OSCILLOSCOPE
120
O
> 50mV and V
V
V
V
V
V
V
V
V
V
7
(VOLTS)
O3
O4
OA
OB
O5
O6
O7
OB
O
Z
Z
O
O
Measured at I
Measured at I
Measured at I
Measured at I
Measured at I
= R
= R
Measured at I
= 50
= 50
160
OA
T
T
x (+60 A) + V
x (-60 A) + V
- V
O6
OB
- V
200
IN
IN
IN
IN
IN
/ (V
IN
O8
= +60 A
= -60 A
= +80 A
= -80 A
= +130 A
= -130 A
O3
< 50mV
OS
OS
- V
O4
Product specification
))
SA5222
SD00365
SD00364