BGD816L_01 NXP [NXP Semiconductors], BGD816L_01 Datasheet - Page 4

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BGD816L_01

Manufacturer Part Number
BGD816L_01
Description
860 MHz, 21.5 dB gain power doubler amplifier
Manufacturer
NXP [NXP Semiconductors]
Datasheet
Philips Semiconductors
Notes
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.
2. Tilt = 10.2 dB (55 to 745 MHz).
3. Tilt = 7.3 dB (55 to 547 MHz).
4. f
5. Measured according to DIN45004B:
6. The module normally operates at V
2001 Nov 15
CSO
d
V
NF
I
SYMBOL
tot
2
o
860 MHz, 21.5 dB gain power doubler amplifier
f
measured at f
f
f
f
measured at f
p
q
p
q
r
= 860.25 MHz; V
= 55.25 MHz; V
= 805.25 MHz; V
= 851.25 MHz; V
= 858.25 MHz; V
composite second
order distortion
second order distortion note 4
output voltage
noise figure
total current
consumption (DC)
PARAMETER
p
p
+ f
+ f
p
q
q
r
q
p
q
= 44 dBmV;
= 860.5 MHz.
= V
= 44 dBmV;
= V
= V
f
r
= 849.25 MHz.
o
o
o
;
6 dB;
6 dB;
79 chs flat; V
112 chs flat; V
132 chs flat; V
112 chs; f
745 MHz; note 2
79 chs; f
547 MHz; note 3
d
CTB compression = 1 dB; 132 chs flat;
f = 859.25 MHz
CSO compression = 1 dB; 132 chs flat;
f = 860.5 MHz
f = 50 MHz
f = 550 MHz
f = 750 MHz
f = 870 MHz
note 6
B
im
= 24 V, but is able to withstand supply transients up to 35 V.
= 60 dB; note 5
m
m
= 210.0 MHz; V
= 210.0 MHz; V
o
o
o
= 44 dBmV; f
CONDITIONS
= 44 dBmV; f
= 44 dBmV; f
4
o
o
m
= 45.3 dBmV at
m
m
= 48.2 dBmV at
= 548.5 MHz
= 746.5 MHz
= 860.5 MHz
62
48
49
345
MIN.
360
TYP.
Product specification
BGD816L
5.5
5.5
6.5
7.5
375
MAX.
66
58
56
57
64
70
dB
dB
dB
dB
dB
dB
dBmV
dBmV
dBmV
dB
dB
dB
dB
mA
UNIT

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