TPS610F TOSHIBA [Toshiba Semiconductor], TPS610F Datasheet

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TPS610F

Manufacturer Part Number
TPS610F
Description
Silicon NPN Epitaxial Planar
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.TPS610F.pdf (5 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
TPS610F
Manufacturer:
PULSE
Quantity:
32 500
Lead(Pb)-Free
Photoelectric Counter
Various Kinds Of Readers
Position Detection
•
•
•
Absolute Maximum Ratings
Opto−Electrical Characteristics
φ5mm epoxy resin package
High sensitivity: I
Half value angle: θ1/2 = ±8° (typ.)
Collector−emitter voltage
Emitter−collector voltage
Collector Current
Collector power dissipation
Collector power dissipation
derating (Ta>25°C)
Operating temperature range
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Dark current
Light current
Collector− emitter saturation
voltage
Switching time
Peak sensitivity wavelength
Half value angle
Note: Color temperature = 2870K, standard tungsten lamp
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Characteristic
Characteristic
L
Rise time
Fall time
= 250μA(typ.)
TOSHIBA Phototransistor Silicon NPN Epitaxial Planar
(Ta = 25°C)
ΔP
Symbol
V
V
TPS610(F)
T
T
PC
CEO
ECO
C
I
opr
stg
I
C
V
D
(Ta = 25°C)
Symbol
/ °C
CE (sat)
θ
(I
λ
I
t
t
CEO
L
P
r
f
1
2
)
−30~100
V
V
I
V
R
−20~75
Rating
C
−150
CE
CE
CC
L
30
50
−2
= 50μA, E = 0.1mW / cm
5
= 100Ω
1
= 24V, E = 0
= 3V, E = 0.1mW / cm
= 5V, I
Test Condition
C
= 2mA
mW / °C
Unit
mW
mA
―
―
°C
°C
V
V
2
2
(Note)
(Note)
Pin Connection
Weight: 0.3g (typ.)
TOSHIBA
Min.
100
―
―
―
―
―
―
2
1
1 . Emitter
2 . Collector
0.005
Typ.
0.25
250
800
±8
6
6
TPS610(F)
0−5C1
2007-10-01
Max.
0.1
0.4
―
―
―
―
―
Unit in mm
Unit
nm
μA
μA
μs
V
°

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TPS610F Summary of contents

Page 1

TOSHIBA Phototransistor Silicon NPN Epitaxial Planar Lead(Pb)-Free Photoelectric Counter Various Kinds Of Readers Position Detection • φ5mm epoxy resin package • High sensitivity 250μA(typ.) L • Half value angle: θ1/2 = ±8° (typ.) Absolute Maximum Ratings Characteristic Collector−emitter ...

Page 2

Precaution Please be careful of the followings. 1. Soldering shall be performed at the top portion from the lead stopper. 2. Soldering temperature: 260°C max. Soldering time: 5s max. 3. When the lead is formed, the lead shall be formed ...

Page 3

Fig.1 Switching time test circuit Input TLN110( – 160 120 Ambient temperature Ta (°C) I – 25°C 30 Color ...

Page 4

Directional Sensitivity Characteristic (Ta = 25°C) Radiation Angle 0° 10° 10° 20° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 0.8 0.6 0.4 0.2 0 Relative sensitivity Switching Characteristics (typ.) Ta=25°C Output pulse V CC Input 10V Input pulse ...

Page 5

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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