CGD914_01 NXP [NXP Semiconductors], CGD914_01 Datasheet - Page 5

• Manufacturer Part Number: CGD914_01
• Description: 860 MHz, 20 dB gain power doubler amplifier
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
2001 Nov 01
handbook, halfpage
handbook, halfpage
860 MHz, 20 dB gain power doubler
amplifier
Z
(1) V
(2) Typ. +3 .
Fig.2
Z
(1) V
(2) Typ. +3 .
Fig.4
S
S
CTB
CSO
(dB)
−100
(dB)
= Z
= Z
−60
−70
−80
−90
−50
−60
−70
−80
−90
o
o
L
L
.
.
0
0
= 75 ; V
= 75 ; V
Composite triple beat as a function of
frequency under tilted conditions.
Composite second order distortion (sum) as
a function of frequency under tilted
conditions.
200
200
B
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(3) Typ.
(4) Typ. 3 .
(3) Typ.
(4) Typ. 3 .
400
400
600
600
800
800
f (MHz)
f (MHz)
(1)
(1)
MCD976
MCD978
(2)
(3)
(4)
(2)
(3)
(4)
1000
1000
(dBmV)
(dBmV)
52
48
44
40
36
52
48
44
40
36
V o
V o
5
handbook, halfpage
handbook, halfpage
Z
(1) V
(2) Typ. +3 .
Fig.3
Z
(1) V
(2) Typ. +3 .
Fig.5
X mod
S
S
(dB)
CSO
−100
(dB)
−100
= Z
= Z
−60
−70
−80
−90
−50
−60
−70
−80
−90
o
o
L
L
.
.
0
= 75 ; V
= 75 ; V
0
Cross modulation as a function of frequency
under tilted conditions.
Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
(2)
(3)
(4)
200
200
B
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(3) Typ.
(4) Typ. 3 .
(3) Typ.
(4) Typ. 3 .
CGD914; CGD914MI
400
400
600
600
Product specification
800
800
f (MHz)
(1)
f (MHz)
(1)
MCD977
MCD979
(2)
(3)
(4)
1000
1000
(dBmV)
52
48
44
40
36
54
50
46
42
38
34
(dBmV)
V o
V o