74AUP1G00 PHILIPS [NXP Semiconductors], 74AUP1G00 Datasheet - Page 8

• Manufacturer Part Number: 74AUP1G00
• Description: Low-power 2-input NAND gate
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
Table 8.
Voltages are referenced to GND (ground = 0 V); for test circuit see
[1]
[2]
Table 9.
Voltages are referenced to GND (ground = 0 V); for test circuit see
74AUP1G00_2
Product data sheet
Symbol
T
C
Symbol
C
t
C
t
PHL
PHL
amb
PD
L
L
= 5 pF
= 10 pF
, t
, t
All typical values are measured at nominal V
C
P
f
f
C
V
N = number of inputs switching;
i
o
(C
D
CC
= 25 C
PD
= input frequency in MHz;
L
PLH
PLH
= output frequency in MHz;
= output load capacitance in pF;
= C
L
is used to determine the dynamic power dissipation (P
= supply voltage in V;
PD
V
Dynamic characteristics
Dynamic characteristics
CC
Parameter
power dissipation capacitance f = 1 MHz; V
Parameter
HIGH-to-LOW and
LOW-to-HIGH
propagation delay
A or B to Y
HIGH-to-LOW and
LOW-to-HIGH
propagation delay
A or B to Y
2
V
CC
f
o
2
) = sum of the outputs.
f
i
N + (C
L
Conditions
see
see
V
CC
V
V
V
V
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
2
…continued
Figure 7
Figure 7
= 1.1 V to 1.3 V
= 1.4 V to 1.6 V
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
= 1.1 V to 1.3 V
= 1.4 V to 1.6 V
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
f
o
) where:
CC
Conditions
.
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
Rev. 02 — 29 June 2006
= 0.8 V
= 1.1 V to 1.3 V
= 1.4 V to 1.6 V
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
D
I
= GND to V
in W).
Figure 8
Figure 8
CC
Min
2.1
1.8
1.4
1.1
1.0
2.2
2.2
1.9
1.3
1.2
40 C to +85 C
[2]
Min
-
-
-
-
-
-
Max
12.2
14.4
7.8
6.2
4.7
4.2
9.2
7.3
5.6
4.9
Low-power 2-input NAND gate
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Typ
2.6
2.8
2.9
3.1
3.6
4.2
40 C to +125 C
Min
2.1
1.8
1.4
1.1
1.0
2.2
2.2
1.9
1.3
1.2
74AUP1G00
[1]
Max
-
-
-
-
-
-
Max
13.5
15.9
10.2
8.6
6.9
5.2
4.7
8.1
6.2
5.4
Unit
pF
pF
pF
pF
pF
pF
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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