IS42S16800B ISSI [Integrated Silicon Solution, Inc], IS42S16800B Datasheet - Page 14
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IS42S16800B
Manufacturer Part Number
IS42S16800B
Description
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
Manufacturer
ISSI [Integrated Silicon Solution, Inc]
Datasheet
1.IS42S16800B.pdf
(60 pages)
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Quantity
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DC RECOMMENDED OPERATING CONDITIONS
Symbol
IS42S81600B,
ABSOLUTE MAXIMUM RATINGS
Note:
1. V
2. V
3. All voltages are referenced to Vss.
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
2. All voltages are referenced to Vss.
14
Symbol
V
V
V
V
P
I
T
T
Symbol
C
C
CI/O
the device. This is a stress rating only and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
CS
OPR
STG
IH
IL
DDQ MAX
OUT
DD MAX
IN
D MAX
IN1
IN2
V
V
V
(min) = -1.2V (
V
(max) = V
DDQ
IH
IL
DD
(2)
(1)
DDQ
Parameter
Input Capacitance: CLK
Input Capacitance:All other input pins
Data Input/Output Capacitance:I/Os
Parameter
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
+1.2V (
PULSE WIDTH
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
IS42S16800B
PULSE WIDTH
< 3
NS
).
< 3
NS
).
(1)
(At T
Integrated Silicon Solution, Inc. — www.issi.com —
A
= 0 to +25°C, V
Com.
Ind.
Min.
-1.2
2.0
3.0
3.0
Min.
2.5
2.5
4.0
–1.0 to V
–0.5 to V
Typ.
–0.5 to +4.6
–0.5 to +4.6
–65 to +150
3.3
3.3
—
—
–40 to +85
DD
0 to +70
Rating
= V
50
1
DDQ
DD
DDQ
+ 0.5
+ 0.5
V
= 3.3 ± 0.3V)
DDQ
Max.
+0.8
3.6
3.6
3.5
3.8
6.5
-6
+ 1.2
Max.
Unit
mA
°C
°C
W
V
V
V
V
-7/-75E
Unit
4.0
5.0
6.5
V
V
V
V
ISSI
1-800-379-4774
Unit
pF
pF
pF
05/01/06
Rev. E
®