IS42S83200B ISSI [Integrated Silicon Solution, Inc], IS42S83200B Datasheet - Page 18

• Manufacturer Part Number: IS42S83200B
• Description: 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
• Manufacturer: ISSI [Integrated Silicon Solution, Inc]

IS42S83200B,
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
18
SYMBOL PARAMETER
—
—
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CAC
RCD
RAC
RC
RAS
RP
RRD
CCD
DPL
DAL
RBD
WBD
RQL
WDL
PQL
QMD
DMD
MRD
Clock Cycle Time
Operating Frequency (CAS Latency = 3)
CAS Latency
Active Command To Read/Write Command Delay Time
RAS Latency (t
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Command Period (ACT[0] to ACT [1])
Column Command Delay Time
(READ, READA, WRIT, WRITA)
Input Data To Precharge Command Delay Time
Input Data To Active/Refresh Command Delay Time
(During Auto-Precharge)
Burst Stop Command To Output in HIGH-Z Delay Time
(Read)
Burst Stop Command To Input in Invalid Delay Time
(Write)
Precharge Command To Output in HIGH-Z Delay Time
(Read)
Precharge Command To Input in Invalid Delay Time
(Write)
Last Output To Auto-Precharge Start Time (Read)
DQM To Output Delay Time (Read)
DQM To Input Delay Time (Write)
Mode Register Set To Command Delay Time
IS42S16160B
RCD
+ t
CAC
)
Integrated Silicon Solution, Inc. — www.issi.com —
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
166
—
10
—
—
—
-2
6
3
3
6
7
3
2
1
2
5
3
0
3
0
2
0
2
143
—
10
—
—
–2
—
7
3
3
6
7
3
2
1
2
5
3
0
3
0
2
0
2
PRELIMINARY INFORMATION Rev. 00E
125
2/3
-2
-1
8
3
6
5
8
6
2
2
1
2
4
3
2
0
3
2
0
2
0
2
100
ISSI
2/3
10
-2
-1
2
5
4
7
5
2
2
1
2
4
3
2
0
3
2
0
2
0
2
1-800-379-4774
UNITS
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
MHz
ns
05/25/06
®