W25X20BV WINBOND [Winbond], W25X20BV Datasheet - Page 30

• Manufacturer Part Number: W25X20BV
• Description: 1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI
• Manufacturer: WINBOND [Winbond]

W25X10BV/20BV/40BV
9.2.18
Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC
Characteristics). The instruction is initiated by driving the /CS pin low and shifting the instruction code
“B9h” as shown in figure 18.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-
down instruction will not be executed. After /CS is driven high, the power-down state will entered
within the time duration of t
(See AC Characteristics). While in the power-down state only the
DP
Release from Power-down / Device ID instruction, which restores the device to normal operation, will
be recognized. All other instructions are ignored. This includes the Read Status Register instruction,
which is always available during normal operation. Ignoring all but one instruction makes the Power
Down state a useful condition for securing maximum write protection. The device always powers-up in
the normal operation with the standby current of ICC1.
Figure 18. Deep Power-down Instruction Sequence Diagram
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