W25X20BV WINBOND [Winbond], W25X20BV Datasheet - Page 42

• Manufacturer Part Number: W25X20BV
• Description: 1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI
• Manufacturer: WINBOND [Winbond]

10.7 AC Electrical Characteristics (
Notes:
DESCRIPTION
/HOLD Active Setup Time relative to CLK
/HOLD Active Hold Time relative to CLK
/HOLD Not Active Setup Time relative to CLK
/HOLD Not Active Hold Time relative to CLK
/HOLD to Output Low-Z
/HOLD to Output High-Z
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High to Power-down Mode
/CS High to Standby Mode without Electronic
Signature Read
/CS High to Standby Mode with Electronic
Signature Read
Write Status Register Time
Byte Program Time (First Byte)
Additional Byte Program Time (After First Byte)
Page Program Time
Sector Erase Time (4KB)
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time W25X10BV / W25X20BV
Chip Erase Time W25X40BV
1.
2.
3.
4.
Clock high + Clock low must be less than or equal to 1/f
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction when SRP is set to 1.
For multiple bytes after first byte within a page,
N = number of bytes programmed.
(4)
cont’d)
t
BPN
- 42 -
(4)
=
C
t
BP1 +
.
SYMBOL
t
t
t
t
t
t
HHQX
WHSL
SHWL
RES
RES
t
t
HLQZ
t
t
t
CHHH
HHCH
HLCH
CHHL
t
t
DP
t
t
t
t
t
BE
BE
t
BP1
BP2
t
PP
SE
CE
W
BP2 * N
(2)
1
2
W25X10BV/20BV/40BV
1
2
(2)
(2)
(2)
(2)
(3)
(3)
(typical) and
ALT
t
t
HZ
LZ
MIN
100
t
20
BPN
5
5
5
5
=
t
BP1 +
TYP
SPEC
120
150
2.5
0.7
0.5
10
30
30
1
t
BP2 * N
(max), where
1,000
MAX
200
800
1.8
12
15
50
12
7
3
3
3
2
4
UNIT
ms
ms
ms
ms
ms
µs
µs
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
s