W25Q40BVSNIG WINBOND [Winbond], W25Q40BVSNIG Datasheet - Page 62
![no-image](/images/no-image-200.jpg)
W25Q40BVSNIG
Manufacturer Part Number
W25Q40BVSNIG
Description
4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
Manufacturer
WINBOND [Winbond]
Datasheet
1.W25Q40BVSNIG.pdf
(73 pages)
- Current page: 62 of 73
- Download datasheet (3Mb)
9.4 DC Electrical Characteristics
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3V.
2. Checker Board Pattern.
PARAMETER
Input Capacitance
Output Capacitance
Input Leakage
I/O Leakage
Standby Current
Power-down Current
Current Read Data /
Dual /Quad 1MHz
Current Read Data /
Dual /Quad 33MHz
Current Read Data /
Dual Output Read/Quad
Output Read 50MHz
Current Read Data /
Dual Output Read/Quad
Output Read 80MHz
Current Write Status
Register
Current Page Program
Current Sector/Block
Erase
Current Chip Erase
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
(2)
(2)
(2)
(2)
SYMBOL
C
Cout
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
LI
LO
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
IL
IH
OL
OH
IN (1)
1
2
3
3
3
3
4
5
6
7
(1)
CONDITIONS
V
V
/CS = VCC,
VIN = GND or VCC
/CS = VCC,
VIN = GND or VCC
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
C = 0.1 VCC / 0.9 VCC
DO = Open
/CS = VCC
/CS = VCC
/CS = VCC
/CS = VCC
I
I
OL
OH
IN
OUT
= 100 µA
= 0V
= –100 µA
= 0V
(1)
(1)
- 62 -
VCC – 0.2
VCC x 0.7
MIN
10/11/12
SPEC
4/5/6
6/7/8
7/8/9
TYP
25
20
20
20
1
8
W25Q40BV
10/12/13.5
15/16.5/18
VCC x 0.3
9/10.5/12
6/7.5/9
MAX
0.2
±2
±2
50
12
25
25
25
6
8
5
UNIT
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
pF
pF
V
V
V
V
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