W25Q40BVSNIG WINBOND [Winbond], W25Q40BVSNIG Datasheet - Page 65

• Manufacturer Part Number: W25Q40BVSNIG
• Description: 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
• Manufacturer: WINBOND [Winbond]

DESCRIPTION
/HOLD Active Hold Time relative to CLK
/HOLD Not Active Setup Time relative to CLK
/HOLD Not Active Hold Time relative to CLK
/HOLD to Output Low-Z
/HOLD to Output High-Z
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High to Power-down Mode
/CS High to Standby Mode without Electronic
Signature Read
/CS High to Standby Mode with Electronic Signature
Read
/CS High to next Instruction after Suspend
Write Status Register Time
Byte Program Time (First Byte)
Additional Byte Program Time (After First Byte)
Page Program Time
Sector Erase Time (4KB)
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time
9.7 AC Electrical Characteristics (
Notes:
1.
2.
3.
4.
5.
Clock high + Clock low must be less than or equal to 1/f
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction when SRP0 bit is set to 1.
For multiple bytes after first byte within a page,
number of bytes programmed.
Max Value t
SE
with <50K cycles is 200ms and >50K & <100K cycles is 400ms.
(4)
cont’d)
(4)
t
BPN
- 65 -
=
SYMBOL
C
t
t
t
t
t
t
t
WHSL
SHWL
HHQX
RES
RES
t
.
BP1 +
HLQZ
t
t
t
t
SUS
CHHH
HHCH
CHHL
DP
t
t
t
t
t
t
t
t
BE
BE
BP1
BP2
CE
PP
SE
W
(2)
1
2
(2)
1
2
t
(2)
(2)
(2)
(2)
(3)
(3)
BP2 * N
(typical) and
ALT
t
t
HZ
LZ
Publication Release Date: July 08, 2010
MIN
100
20
5
5
5
t
BPN
=
TYP
120
150
2.5
0.7
10
20
30
t
1
BP1 +
SPEC
Preliminary - Revision B
W25Q40BV
t
BP2 * N
200/400
1,000
MAX
800
1.8
3.0
12
20
15
50
12
7
3
3
4
(max), where N =
(5)
UNIT
ms
ms
ms
ms
ms
µs
µs
µs
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
s