NAND01G-N STMICROELECTRONICS [STMicroelectronics], NAND01G-N Datasheet - Page 13

• Manufacturer Part Number: NAND01G-N
• Description: 1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

NAND01G-N
2.6
2.7
2.8
2.9
2.10
2.11
Flash memory Read Enable (R)
The NAND Flash memory Read Enable pin, R, controls the sequential data output during
Read operations. The falling edge of R also increments the internal column address counter
by one.
Flash memory Write Enable (W
The NAND Flash memory Write Enable input, W, controls writing to the Command Interface,
Input Address and Data latches. Both addresses and data are latched on the rising edge of
Write Enable.
Flash memory Write Protect (WP)
The Write Protect pin is a NAND Flash memory input that gives a hardware protection
against unwanted program or erase operations. When Write Protect is Low, V
Flash memory device does not accept any program or erase operations.
It is recommended to keep the Write Protect pin Low, V
Flash memory Ready/Busy (RB)
The Ready/Busy output, RB, is an open-drain NAND Flash memory output that can be used
to identify if the P/E/R Controller is currently active.
When Ready/Busy is Low, V
operation completes Ready/Busy goes High, V
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
Flash memory V
V
the main power supply for all operations (read, program and erase).
Flash memory V
Ground, V
connected to the system ground.
DDF
provides the power supply to the internal core of the NAND Flash memory device. It is
SSF,
is the reference for the power supply for the NAND Flash memory. It must be
DDF
SSF
OL
ground
supply voltage
, a read, program or erase operation is in progress. When the
Rev1.0
F
OH
)
.
IL
, during power-up and power-down.
Signals description
IL
, the NAND
13/23