M48Z35-70MH1E STMICROELECTRONICS [STMicroelectronics], M48Z35-70MH1E Datasheet - Page 12

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M48Z35-70MH1E

Manufacturer Part Number
M48Z35-70MH1E
Description
256Kbit (32Kbit x 8) ZEROPOWER SRAM
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Figure 8.
Table 5.
1. Valid for ambient operating temperature: T
2. V
3. V
Table 6.
1. Valid for ambient operating temperature: T
2. At 25°C, V
Note:
12/23
Symbol
Symbol
V
t
V
t
V
DR
PFD
CC
PFD
t
FB
t
t
t
F
PFD
PD
t
RB
rec
SO
R
(2)
(2)
(3)
passes V
(min) to V
(max) to V
V CC
V PFD (max)
V PFD (min)
V SO
INPUTS
OUTPUTS
CC
Power-fail deselect voltage
Battery back-up switchover voltage
Expected data retention time
For more information on Battery Storage Life refer to the Application Note AN1012.
Power down/up mode AC waveforms
Power down/up AC characteristics
Power down/up trip points DC characteristics
All voltages referenced to V
E or W at V
V
V
V
V
V
= 0V.
PFD
PFD
PFD
PFD
SS
PFD
SS
PFD
to V
(min).
fall time of less than t
(max) to V
(min) to V
(min) to V
(max) to inputs recognized
(min) fall time of less than t
tPD
PFD
(PER CONTROL INPUT)
IH
(min) V
VALID
before power down
RECOGNIZED
SS
PFD
PFD
Parameter
tF
Parameter
V
(max) V
CC
CC
(min) V
fall time
rise time
FB
A
A
may cause corruption of RAM data.
(1)
CC
CC
= 0 to 70°C; V
= 0 to 70°C; V
(1)
SS
rise time
fall time
F
tFB
may result in deselection/write protection not occurring until 200µs after
.
M48Z35/Y
M48Z35Y
M48Z35
CC
CC
= 4.75 to 5.5V or 4.5 to 5.5V (except where noted).
= 4.75 to 5.5V or 4.5 to 5.5V (except where noted).
tDR
DON'T CARE
HIGH-Z
Min
300
Min
4.5
4.2
10
10
40
10
0
1
tRB
4.35
Typ
4.6
3.0
Max
200
tR
(PER CONTROL INPUT)
trec
RECOGNIZED
Max
4.75
VALID
4.5
AI01168C
Unit
ms
µs
µs
µs
µs
µs
YEARS
Unit
V
V
V

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