CY14B256LA-ZS45XI CYPRESS [Cypress Semiconductor], CY14B256LA-ZS45XI Datasheet - Page 10

• Manufacturer Part Number: CY14B256LA-ZS45XI
• Description: 256 Kbit (32K x 8) nvSRAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Data Retention and Endurance
Capacitance
Thermal Resistance
AC Test Conditions
Input Pulse Levels .................................................... 0V to 3V
Input Rise and Fall Times (10% - 90%)........................ <3 ns
Input and Output Timing Reference Levels .................... 1.5V
Note
DATA
NV
C
C
10. These parameters are guaranteed by design and are not tested.
Document Number: 001-54707 Rev. *B
IN
OUT
Parameter
C
Parameter
Parameter
R
OUTPUT
Θ
Θ
JC
JA
3.0V
[10]
[10]
Input Capacitance
Output Capacitance
30 pF
Data Retention
Nonvolatile STORE Operations
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Description
Description
577Ω
R1
789Ω
Figure 4. AC Test Loads
T
V
Test conditions follow standard
test methods and procedures for
measuring thermal impedance, in
accordance with EIA/JESD51.
Description
A
R2
CC
= 25°C, f = 1 MHz,
= V
CC
Test Conditions
(Typ)
OUTPUT
Test Conditions
3.0V
5 pF
48-SSOP 44-TSOP II
37.47
24.71
577Ω
R1
31.11
5.56
1,000
Min
Max
20
7
7
for tri-state specs
CY14B256LA
789Ω
32-SOIC
R2
41.55
24.43
Years
Unit
Unit
pF
pF
K
°C/W
°C/W
Page 10
Unit
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