TC55V16256JI TOSHIBA [Toshiba Semiconductor], TC55V16256JI Datasheet - Page 2

• Manufacturer Part Number: TC55V16256JI
• Description: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

BLOCK DIAGRAM
MAXIMUM RATINGS
V
V
V
P
T
T
T
*: −1.5 V with a pulse width of 20%･t
**: V
solder
stg
opr
DD
IN
I/O
D
SYMBOL
I/O10
I/O12
I/O13
I/O14
I/O15
I/O16
I/O11
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
I/O9
WE
UB
DD
OE
CE
LB
+ 1.5 V with a pulse width of 20%･t
Power Supply Voltage
Input Terminal Voltage
Input/Output Terminal Voltage
Power Dissipation
Soldering Temperature (10s)
Storage Temperature
Operating Temperature
A13
A14
A15
A17
A0
A1
A4
A5
A8
A9
GENERATOR
RC
CLOCK
CE
RATING
min (4 ns max)
RC
CE
min (4 ns max)
A2 A3 A6 A7 A10 A11 A12
COLUMN ADDRESS BUFFER
MEMORY CELL ARRAY
COLUMN DECODER
1,024 × 256 × 16
SENSE AMP
(4,194,304)
A16
−0.5* to V
TC55V16256JI/FTI-12,-15
CE
−0.5* to 4.6
−0.5 to 4.6
−65 to 150
−40 to 100
VALUE
260
1.4
DD
V
GND
+ 0.5**
DD
2002-01-07 2/11
UNIT
°C
°C
°C
W
V
V
V