HM2907A HSMC [Hi-Sincerity Mocroelectronics], HM2907A Datasheet
HM2907A
Manufacturer Part Number
HM2907A
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Manufacturer
HSMC [Hi-Sincerity Mocroelectronics]
Datasheet
1.HM2907A.pdf
(3 pages)
HM2907A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM2907A is designed for general purpose amplifier and high
speed, medium-power switching applications.
Features
Absolute Maximum Ratings
Characteristics
HM2907A
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature .................................................................................... +150 C Maximum
Total Power Dissipation (Ta=25 C) .................................................................................... 1.2 W
VCBO Collector to Base Voltage ........................................................................................ -60 V
VCEO Collector to Emitter Voltage ..................................................................................... -60 V
VEBO Emitter to Base Voltage ............................................................................................. -5 V
IC Collector Current ...................................................................................................... -600 mA
Low collector saturation voltage
High speed switching
For complementary use with NPN type HM2222A
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
BVCBO
BVCEO
BVEBO
Symbol
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
ICBO
ICEX
Cob
fT
Min.
100
100
100
200
-60
-60
75
50
-5
-
-
-
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25 C)
Typ.
-0.2
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-0.4
-1.6
-1.3
-2.6
300
-10
-50
8.0
-
-
-
-
-
-
-
-
MHz
Unit
nA
nA
pF
V
V
V
V
V
V
V
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
IC=-10uA
IC=-10mA
IC=-10uA
VCB=-50V
VCE=-30V, VBE=-0.5V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-100uA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
VCE=-20V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
Test Conditions
Spec. No. :HE9520
Issued Date : 1997.06.18
Revised Date : 2002.04.10
Page No. : 1/3
HSMC Product Specification
SOT-89
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HM2907A Summary of contents
Page 1
... HI-SINCERITY MICROELECTRONICS CORP. HM2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HM2907A is designed for general purpose amplifier and high speed, medium-power switching applications. Features Low collector saturation voltage High speed switching For complementary use with NPN type HM2222A Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...
Page 2
... I C =10I B 75 1000 125 C 100 0 Collector Current-I Cutoff Frequency & Collector Current 1000 100 Collector Current (mA) HM2907A 10000 C hFE @ V =10V CE 100 1000 (mA) C 100 o C 100 1000 (mA) C 10000 V =20V CE 100 Spec. No. :HE9520 Issued Date : 1997.06.18 Revised Date : 2002 ...
Page 3
... Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HM2907A H D Style: Pin 1.Base 2.Collector 3.Emitter ...