HAD825 HSMC [Hi-Sincerity Mocroelectronics], HAD825 Datasheet

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HAD825

Manufacturer Part Number
HAD825
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
HSMC [Hi-Sincerity Mocroelectronics]
Datasheet
HAD825
NPN EPITAXIAL PLANAR TRANSISTOR
Features
Darlington transistor.
Absolute Maximum Ratings
Characteristics
HAD825
Storage Temperature ........................................................................................... -55 ~ +150 C
Junction Temperature.................................................................................... +150 C Maximum
Total Power Dissipation (Ta=25 C) ............................................................................... 625 mW
VCBO Collector to Base Voltage ......................................................................................... 80 V
VCES Collector to Emitter Voltage ...................................................................................... 55 V
VEBO Emitter to Base Voltage............................................................................................ 12 V
IC Collector Current........................................................................................................ 600mA
Maximum Temperatures
Maximum Power Dissipations
Maximum Voltages and Currents (Ta=25 C)
*VCE(sat)
*VCE(sat)
VBE(on)
BVCBO
BVEBO
Symbol
BVCES
*hFE1
*hFE2
ICBO
IEBO
ICES
Cob
fT
Min.
10K
10K
125
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25 C)
80
55
12
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
100K
Max.
100
100
500
1.2
1.5
1.5
8
-
-
-
-
-
MHz
Unit
nA
nA
nA
pF
V
V
V
V
V
V
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
IC=100uA
IC=100uA
IE=10uA
VCB=60V
VEB=10V
VCE=60V
IC=10mA, IB=0.01mA
IC=100mA, IB=0.1mA
IC=100mA, VCE=5V
IC=10mA, VCE=5V
IC=100mA, VCE=5V
IC=10mA, VCE=5V f=100MHz
VCB=10V, f=1MHz
Test Conditions
Spec. No. : HE6406
Issued Date : 1994.01.13
Revised Date : 2002.03.06
Page No. : 1/3
HSMC Product Specification
TO-92

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HAD825 Summary of contents

Page 1

... VCES Collector to Emitter Voltage ...................................................................................... 55 V VEBO Emitter to Base Voltage............................................................................................ Collector Current........................................................................................................ 600mA Characteristics (Ta=25 C) Symbol Min. BVCBO 80 BVCES 55 BVEBO 12 ICBO - IEBO - ICES - *VCE(sat) - *VCE(sat) - VBE(on) - *hFE1 10K *hFE2 10K fT 125 Cob - HAD825 Typ. Max. Unit - - 100 nA - 100 nA - 500 ...

Page 2

... Saturation Voltage & Collector Current 10000 V BE(sat =1000I 1000 o 125 C 100 1 10 Collector Current-I HAD825 1000 100 1000 (mA) C 10000 1000 100 100 1000 (mA) C Spec. No. : HE6406 Issued Date : 1994.01.13 Revised Date : 2002.03.06 Page No. : 2/3 Saturation Voltage & Collector Current ...

Page 3

... Head Office And Factory: Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HAD825 ...

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