MT28F320J3FS-12 MICRON [Micron Technology], MT28F320J3FS-12 Datasheet - Page 45

• Manufacturer Part Number: MT28F320J3FS-12
• Description: Q-FLASHTM MEMORY
• Manufacturer: MICRON [Micron Technology]

AC CHARACTERISTICS – WRITE OPERATIONS
(Notes: 1, 2, 3); Commercial Temperature (0ºC ≤ T
NOTE: 1. CEx LOW is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEx HIGH is defined as the first edge
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
AC CHARACTERISTICS
PARAMETER
RP# High Recovery to WE# (CEx) Going LOW
CEx (WE#) LOW to WE# (CEx) Going LOW
Write Pulse Width
Data Setup to WE# (CEx) Going HIGH
Address Setup to WE# (CEx) Going HIGH
CEx (WE#) Hold from WE# (CEx) HIGH
Data Hold from WE# (CEx) HIGH
Address Hold from WE# (CEx) HIGH
Write Pulse Width HIGH
V
Write Recovery Before Read
WE# (CEx) HIGH to STS Going LOW
V
WE# (CEx) HIGH to Status Register Busy
PEN
PEN
Setup to WE# (CEx) Going HIGH
Hold from Valid SRD, STS Going HIGH
10. V
2. Read timing characteristics during BLOCK ERASE, PROGRAM, and LOCK BIT CONFIGURATION operations are the same as
3. A WRITE operation can be initiated and terminated with either CEX or WE#.
4. Sampled, not 100% tested.
5. Write pulse width (
6. Refer to Table 4 for valid A
7. Write pulse width HIGH (
8. For array access,
9. STS timings are based on STS configured in its RY/BY# default mode.
of CE0, CE1, or CE2 that disables the device.
during READ-only operations. Refer to AC Characteristics – Read-Only Operations.
(whichever goes HIGH first).
LOW (whichever goes LOW first).
0).
PEN
should be held at V
t
AA is required in addition to
t
WP) is defined from CEx or WE# going LOW (whichever goes LOW last) to CEx or WE# going HIGH
PENH
t
WPH) is defined from CEx or WE# going HIGH (whichever goes HIGH first) to CEx or WE# going
IN
until determination of block erase, program, or lock bit configuration success (SR1/3/4/5 =
and D
IN
for block erase, program, or lock bit configuration.
t
A
WR for any accesses after a WRITE.
≤ +85ºC), Extended Temperature (-40ºC ≤ T
45
t
WPH (
t
t
t
SYMBOL
CH (
CS (
WP (
t
t
t
t
t
t
t
t
t
VPH
t
VPS
WR
STS
WB
DH
AH
RS
DS
AS
t
t
WH)
WS)
t
t
CPH)
CP)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb, 64Mb, 32Mb
MIN
70
50
55
30
35
1
0
0
0
0
0
0
-11/-12/-15
Q-FLASH MEMORY
MAX
200
200
A
UNITS
≤ +85ºC)
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
©2002, Micron Technology, Inc.
4, 9, 10
NOTES
4
5
5
6
6
7
4
8
9
4