M59DR032A100N1T STMICROELECTRONICS [STMicroelectronics], M59DR032A100N1T Datasheet - Page 16

• Manufacturer Part Number: M59DR032A100N1T
• Description: 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M59DR032A, M59DR032B
Table 18. Device Geometry Definition
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Offset Word
M59DR032A M59DR032A Erase Block Region Information
M59DR032B M59DR032B
Mode
2Ah
2Bh
2Ch
2Dh
2Eh
2Dh
2Eh
27h
28h
29h
2Fh
30h
31h
32h
33h
34h
2Fh
30h
31h
32h
33h
34h
003Eh
003Eh
0016h
0001h
0000h
0000h
0000h
0002h
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
Data
Device Size = 2
Flash Device Interface Code description: Asynchronous x16
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions within device
bit 7 to 0 = x = number of Erase Block Regions
Note:1. x = 0 means no erase blocking, i.e. the device erases at once in "bulk."
bit 31 to 16 = z, where the Erase Block(s) within this Region are (z) times 256 bytes in
size. The value z = 0 is used for 128 byte block size.
e.g. for 64KB block size, z = 0100h = 256 => 256 * 256 = 64K
bit 15 to 0 = y, where y+1 = Number of Erase Blocks of identical size within the Erase
Block Region:
e.g.
Note: y = 0 value must be used with number of block regions of one as indicated
2. x specifies the number of regions within the device containing one or more con-
3. By definition, symmetrically block devices have only one blocking region.
y = D15-D0 = FFFFh => y+1 = 64K blocks [maximum number]
y = 0 means no blocking (# blocks = y+1 = "1 block")
by (x) = 0
tiguous Erase Blocks of the same size. For example, a 128KB device (1Mb)
having blocking of 16KB, 8KB, four 2KB, two 16KB, and one 64KB is considered
to have 5 Erase Block Regions. Even though two regions both contain 16KB
blocks, the fact that they are not contiguous means they are separate Erase
Block Regions.
n
in number of bytes
Description
n