BCR16B MITSUBISHI [Mitsubishi Electric Semiconductor], BCR16B Datasheet

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BCR16B

Manufacturer Part Number
BCR16B
Description
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
Manufacturer
MITSUBISHI [Mitsubishi Electric Semiconductor]
Datasheet
APPLICATION
Contactless AC switches, light dimmer, on/off and speed control of small induction motors,
on/off control of traffic signals, on/off control of copier lamps,
solid state relay, microwave ovens
MAXIMUM RATINGS
V
V
I
I
I
P
P
V
I
T
1. Gate open.
T (RMS)
TSM
2 t
GM
BCR16A, BCR16B, BCR16C, BCR16E
DRM
DSM
GM
G (AV)
GM
j
• I
• V
• I
Symbol
Symbol
T (RMS)
FGT !
DRM
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
RMS on-state current
Surge on-state current
I
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
2 t
..............................................................400V/500V
, I
for fusing
BCR16A, BCR16B, BCR16C, BCR16E
...................................................................... 16A
RGT !
, I
Parameter
Parameter
RGT #
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
........................................... 30mA
1
1
Commercial frequency, sine full
wave, 360 conduction
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
400
600
8
Conditions
BCR16A, B, C
BCR16E
MITSUBISHI SEMICONDUCTOR TRIAC
Voltage class
OUTLINE DRAWING
3
1
2
3
1
2
T
T
GATE TERMINAL
T
T
1
2
c
b
2.0 MIN
TERMINAL
TERMINAL
=99 C
=71 C
2
3
MEDIUM POWER USE
500
700
10
BCR16A
11.1 MAX
8.7 MAX
–20 ~ +125
Ratings
170
121
0.5
16
10
5
2
2.0 MIN
1
Dimensions
Feb.1999
in mm
Unit
Unit
A
W
W
V
V
A
A
V
A
2
C
s

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BCR16B Summary of contents

Page 1

... BCR16A, BCR16B, BCR16C, BCR16E NON-INSULATED TYPE INSULATED TYPE, GLASS PASSIVATION TYPE BCR16A, BCR16B, BCR16C, BCR16E • I ...................................................................... 16A T (RMS) • V ..............................................................400V/500V DRM • ........................................... 30mA FGT ! RGT ! RGT # APPLICATION Contactless AC switches, light dimmer, on/off and speed control of small induction motors, on/off control of traffic signals, on/off control of copier lamps, ...

Page 2

... T = =6V =330 =125 C, V =1/ DRM Junction to case (BCR16A, BCR16B, BCR16C) Junction to base (BCR16E) Test conditions Unit 1. Junction temperature T =125 Rate of decay of on-state commutat ing current (di/dt) =–8A/ Peak off-state voltage V =400V D MITSUBISHI SEMICONDUCTOR TRIAC ...

Page 3

... FGT I, RGT I, RGT III – GATE CURRENT (mA) BCR16A, BCR16B, BCR16C, BCR16E BCR16C (16. 2.0 MIN 8.7 MAX 2 M6 1.0 200 180 160 140 120 100 2.8 3.2 3.6 4.0 4.4 10 GATE TRIGGER CURRENT · VOLTAGE VS. ...

Page 4

... OF CONDUCTION ANGLE 40 NATURAL CONVECTION : MOUNTING ON FIN WITH SOLDER 20 : MOUNTING PLATE WITHOUT GREASE RMS ON-STATE CURRENT (A) MITSUBISHI SEMICONDUCTOR TRIAC BCR16A, BCR16B, BCR16C, BCR16E MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO BASE) (BCR16E 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0 –1 ...

Page 5

... V V TEST PROCEDURE 1 TEST PROCEDURE TEST PROCEDURE 3 MITSUBISHI SEMICONDUCTOR TRIAC BCR16A, BCR16B, BCR16C, BCR16E ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 120 100 80 60 ...

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