BCR16B MITSUBISHI [Mitsubishi Electric Semiconductor], BCR16B Datasheet - Page 2

• Manufacturer Part Number: BCR16B
• Description: MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

MAXIMUM RATINGS (continue)
ELECTRICAL CHARACTERISTICS
T
V
I
V
V
V
V
I
I
I
V
R
R
(dv/dt)
2. Measurement using the gate trigger characteristics measurement circuit.
3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
DRM
FGT !
RGT !
RGT #
stg
iso
TM
FGT !
RGT !
RGT #
GD
th (j-c)
th (j-b)
Symbol
Symbol
Voltage
class
—
—
—
10
8
c
Storage temperature
Weight (Typical value)
Soldering temperature
Mounting torque
Isolated voltage
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
V
400
500
(V)
DRM
Parameter
Parameter
Symbol
R
R
L
L
2
2
(dv/dt)
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
c
Min.
10
10
—
—
!
@
#
!
@
#
BCR16A
BCR16B
BCR16C
BCR16E
BCR16A only, 10 sec.
BCR16C only (Typical value)
BCR16E only, T
T
T
measurement
T
T
T
Junction to case (BCR16A, BCR16B, BCR16C)
Junction to base (BCR16E)
j
c
j
j
j
=125 C, V
=25 C, V
=25 C, V
=125 C, V
=25 C, T
V/ s
Unit
D
D
b
DRM
=6V, R
=6V, R
D
=25 C (BCR16E only), I
BCR16A, BCR16B, BCR16C, BCR16E
1. Junction temperature
2. Rate of decay of on-state commutat-
3. Peak off-state voltage
=1/2V
T
ing current
(di/dt)
V
a
j
D
applied
=25 C, AC 1 minute, T
=125 C
=400V
L
L
DRM
=6 , R
=6 , R
c
=–8A/ms
Test conditions
Test conditions
G
G
Test conditions
=330
=330
TM
=25A , Instantaneous
2
Terminal to base
MITSUBISHI SEMICONDUCTOR TRIAC
Commutating voltage and current waveforms
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
Min.
0.2
—
—
—
—
—
—
—
—
—
—
3
MEDIUM POWER USE
(inductive load)
Limits
Typ.
–20 ~ +125
—
—
—
—
—
—
—
—
—
—
—
—
Ratings
1500
2.94
230
3.0
8.5
8.5
9.5
30
Max.
3.0
1.6
1.5
1.5
1.5
1.2
2.5
(di/dt)c
30
30
30
—
—
TIME
TIME
TIME
Feb.1999
V
kg·cm
D
V/ s
Unit
N·m
Unit
mA
mA
mA
mA
C/W
C/W
g
V
V
V
V
V
V
C
C