M54522P_11 MITSUBISHI [Mitsubishi Electric Semiconductor], M54522P_11 Datasheet
M54522P_11
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M54522P_11 Summary of contents
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DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54522P and M54522FP are eight-circuit Darlington tran- sistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current ...
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ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted –20 ~ +75 C) Symbol Parameter V Collector-emitter voltage CEO I Collector current C V Input voltage I I Clamping diode forward current F V Clamping diode reverse voltage R P Power ...
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NOTE 1 TEST CIRCUIT INPUT Measured device PG 50 (1) Pulse generator (PG) characteristics : PRR = 1kHz 6ns 6ns (2) Input-output ...
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DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Duty-Cycle-Collector Characteristics (M54522FP) 500 400 300 200 •The collector current values represent the current per circuit. 100 •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated ...