M54522P_11 MITSUBISHI [Mitsubishi Electric Semiconductor], M54522P_11 Datasheet - Page 3
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M54522P_11
Manufacturer Part Number
M54522P_11
Description
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Manufacturer
MITSUBISHI [Mitsubishi Electric Semiconductor]
Datasheet
1.M54522P_11.pdf
(4 pages)
TYPICAL CHARACTERISTICS
NOTE 1 TEST CIRCUIT
PG
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
(2) Input-output conditions : R
(3) Electrostatic capacity C
tw = 10 s, tr = 6ns, tf = 6ns, Z
V
connections and input capacitance at probes
IN
50
= 0 to 8V
500
400
300
200
100
2.0
1.5
1.0
0.5
INPUT
0
0
0
0
Thermal Derating Factor Characteristics
M54522P
M54522FP
Duty-Cycle-Collector Characteristics
•The collector current values
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
•Ta = 25 C
represent the current per circuit.
value of the simultaneously-operated circuit.
Ambient temperature Ta ( C)
Measured device
20
25
L
Duty cycle (%)
includes floating capacitance at
L
(M54522P)
40
= 25 , V
O
= 50
50
OPEN
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
60
O
= 10V
V
75
O
80
R
C
L
L
OUTPUT
100
100
TIMING DIAGRAM
OUTPUT
INPUT
500
400
300
200
100
500
400
300
200
100
0
0
50%
0
0
Output saturation voltage V
•The collector current values
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
•Ta = 75 C
V
Duty-Cycle-Collector Characteristics
represent the current per circuit.
value of the simultaneously-operated circuit.
Ta = 75 C
I
Collector Current Characteristics
= 4V
50%
ton
Output Saturation Voltage
20
0.5
Duty cycle (%)
(M54522P)
40
1.0
Ta = –20 C
60
Ta = 25 C
CE
1.5
M54522P/FP
80
(sat) (V)
50%
100
2.0
toff
50%
Aug. 1999