BCR553_07 INFINEON [Infineon Technologies AG], BCR553_07 Datasheet
BCR553_07
Related parts for BCR553_07
BCR553_07 Summary of contents
Page 1
PNP Silicon Digital Transistor Built in bias resistor ( Pb-free (RoHS compliant) package Qualified according AEC Q101 EHA07183 Type BCR553 Maximum Ratings Parameter Collector-emitter ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage µ Collector-base cutoff current ...
Page 3
DC current gain (common emitter configuration -40 °C -25 ° °C 85 °C 125 ° ...
Page 4
Total power dissipation P 400 mW 300 250 200 150 100 Permissible Pulse Load totmax totDC 0.005 0.01 0.02 ...
Page 5
Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...
Page 6
Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). ...