NCV33164 ONSEMI [ON Semiconductor], NCV33164 Datasheet - Page 6
![no-image](/images/no-image-200.jpg)
NCV33164
Manufacturer Part Number
NCV33164
Description
Micropower Undervoltage Sensing Circuits
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.NCV33164.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NCV33164D-3R2G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NCV33164D-5R2G
Manufacturer:
ON/安森美
Quantity:
20 000
Comparator hysteresis can be increased with the addition of resistor R
I
equations are accurate to ±10% with R
in
Supply
Power
Supply
Power
as V
in
crosses the comparator threshold (Figure 8). An increase of the lower threshold DV
4.3V
I
in
Figure 16. Voltage Monitor
MC3X164-5
Figure 18. MOSFET Low Voltage Gate Drive Protection Using the MC3X164−5
R
Input
H
1.2 V
1.2 V
Figure 15. Low Voltage Microprocessor Reset With Additional Hysteresis
V
in
ref
ref
GND
GND
H
less than 1.0 kW and R
Input
1.2 V
ref
GND
Reset
L
MC3X164-5
between 4.3 kW and 43 kW.
270
H
(MC3X164−5 Shown)
http://onsemi.com
V
DV
where: R
43 kW ≥ R
. The hysteresis equation has been simplified and does not account for the change of input current
R
1.0 k
H
L
≈
th(lower)
Reset
4.3 R
H
R
≤ 1.0 kW
L
≈ 10 R
6
L
≥ 4.3 kW
Reset
H
Overheating of the logic level power MOSFET due to insufficient
gate voltage can be prevented with the above circuit. When the
input signal is below the 4.3 V threshold of the MC3X164-5, its
output grounds the gate of the L
Microprocessor
H
+ 0.06
x 10
V
CC
Circuit
th(lower)
Figure 17. Solar Powered Battery Charger
- 6
MTP3055EL
R
L
will be observed due to I
Input
1.2 V
ref
GND
2
(mV)
103
123
160
155
199
280
262
306
357
421
530
MOSFET.
V
60
H
in
which is typically 10 mA at 4.3 V. The
DV
(mV)
1.0
1.0
1.0
2.2
2.2
2.2
4.7
4.7
4.7
4.7
4.7
0
Test Data
th
Reset
100
100
100
220
220
220
470
470
470
470
470
(W)
R
0
H
Solar
Cells
(kW)
6.8
4.3
6.8
4.3
8.2
6.8
5.6
4.3
R
43
10
10
10
L