ZXMS66004DGTA DIODES [Diodes Incorporated], ZXMS66004DGTA Datasheet

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ZXMS66004DGTA

Manufacturer Part Number
ZXMS66004DGTA
Description
60V N-channel self protected enhancement mode
Manufacturer
DIODES [Diodes Incorporated]
Datasheet
ZXMS6004DG
60V N-channel self protected enhancement mode
Intellifet MOSFET
Summary
Continuous drain source voltage
On-state resistance
Nominal load current (V
Clamping energy
Description
The ZXMS6004DG is a self protected low side MOSFET with logic level
input. It integrates over-temperature, over-current, over-voltage (active
clamp) and ESD protected logic level functionality. The ZXMS6004DG is
ideal as a general purpose switch driven from 3.3V or 5V
microcontrollers in harsh environments where standard MOSFETs are
not rugged enough.
Features
Ordering information
Issue 1 - December 2008
© Diodes Incorporated, 2008
Device
ZXMS66004DGTA
Compact high power dissipation package
Low input current
Logic Level Input (3.3V and 5V)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input Protection (ESD)
High continuous current rating
IN
Part mark
ZXMS
6004D
= 5V)
Reel size
(inches)
7
500 mΩ
1.3 A
490mJ
60 V
1
12 embossed
Diodes Incorporated
Tape width
A Product Line of
(mm)
D
Quantity per reel
3,000 units
Top view
www.diodes.com
www.zetex.com
IN
D
S

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ZXMS66004DGTA Summary of contents

Page 1

... Thermal shutdown with auto restart • Over-current protection • Input Protection (ESD) • High continuous current rating Ordering information Device Part mark ZXMS66004DGTA ZXMS 6004D Issue 1 - December 2008 © Diodes Incorporated, 2008 A Product Line of Diodes Incorporated 60 V 500 mΩ 1.3 A 490mJ ...

Page 2

Functional block diagram ESD Protection Application information • Especially suited for loads with a high in-rush current such as lamps and motors. • All types of resistive, inductive and capacitive loads in switching applications. μC compatible power switch for 12V ...

Page 3

Absolute maximum ratings Parameter Continuous Drain-Source voltage Drain-Source voltage for short circuit protection Continuous input voltage Continuous input current ≤6V -0.2V≤ <-0. > Operating temperature range Storage temperature range Power dissipation at T =25°C ...

Page 4

Recommended operating conditions The ZXMS6004DG is optimised for use with µC operating from 3.3V and 5V supplies. Symbol Description V Input voltage range IN T Ambient temperature range A V High level input voltage for MOSFET ...

Page 5

Electrical characteristics (at T Parameter Static Characteristics Drain-Source clamp voltage Off-state drain Ccrrent Off-state drain current Input threshold voltage Input current Input current Input current while over temperature active Static Drain-Source on-state resistance Static Drain-Source on-state resistance (a) Continuous drain ...

Page 6

Electrical characteristics - continued Parameter Over-temperature protection Thermal overload trip (a) temperature (a) Thermal hysteresis Note: (a) Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part ...

Page 7

Typical characteristics Issue 1 - December 2008 © Diodes Incorporated, 2008 ZXMS6004DG 7 www.zetex.com www.diodes.com ...

Page 8

Issue 1 - December 2008 © Diodes Incorporated, 2008 ZXMS6004DG 8 www.zetex.com www.diodes.com ...

Page 9

Package information - SOT223 Dim. Millimeters Min. Max 1.8 A1 0.02 0.1 A2 1.55 1.65 b 0.66 0.84 b2 2.90 3.10 C 0.23 0.33 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1 ...

Page 10

Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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