ZXMS66004DGTA DIODES [Diodes Incorporated], ZXMS66004DGTA Datasheet - Page 3

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ZXMS66004DGTA

Manufacturer Part Number
ZXMS66004DGTA
Description
60V N-channel self protected enhancement mode
Manufacturer
DIODES [Diodes Incorporated]
Datasheet
Absolute maximum ratings
Thermal resistance
NOTES
(a) For a device surface mounted on a 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air
(b) For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board in still air
(c) Thermal resistance from junction to the mounting surface of the drain pin.
Issue 1 - December 2008
© Diodes Incorporated, 2008
Parameter
Continuous Drain-Source voltage
Drain-Source voltage for short circuit protection
Continuous input voltage
Continuous input current
-0.2V≤V
V
Operating temperature range
Storage temperature range
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Pulsed drain current @ V
Pulsed drain current @ V
Continuous source current (Body Diode)
Pulsed dource current (Body Diode)
Unclamped single pulse inductive energy,
Tj=25°C, I
Electrostatic discharge (Human body model)
Charged device model
Parameter
Junction to ambient
Junction to ambient
Junction to case
conditions.
conditions.
IN
<-0.2V or V
IN
≤6V
D
=0.5A, V
IN
(c)
>6V
(a)
(b)
DD
=24V
A
A
=25°C
=25°C
IN
IN
=3.3V
=5V
(a)
(b)
(a)
3
Symbol
V
V
V
I
T
T
P
P
I
I
I
I
E
V
V
Symbo
R
R
R
IN
DM
DM
S
SM
j
stg
D
D
AS
DS
DS(SC)
IN
ESD
CDM
θJA
θJA
θJC
,
-40 to +150
-55 to +150
-0.5 ... +6
No limit
│I
Value
ZXMS6004DG
Limit
4000
1000
IN
10.4
490
96
42
12
1.3
3.0
2.5
60
36
24
2
1
5
│≤2
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mW/°C
mW/°C
°C/W
°C/W
°C/W
Unit
Unit
mA
mJ
°C
°C
W
W
A
A
A
A
V
V
V
V
V

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