IPS612-05B IPS [IP SEMICONDUCTOR CO., LTD.], IPS612-05B Datasheet

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IPS612-05B

Manufacturer Part Number
IPS612-05B
Description
silicon controlled rectifiers
Manufacturer
IPS [IP SEMICONDUCTOR CO., LTD.]
Datasheet
IPS612 series of silicon controlled rectifiers are
specifically designed for medium power switching and
phase control applications.
High current density due to double mesa technology
SIPOS and Glass passivation technology used has
reliable operation up to 125℃ junction temperature.
Low Igt parts available.
IPS612 series are suitable for general purpose
applications, a high gate sensitivity is required.
MAIN FEATURES
RMS on–state current (Tc = 105℃, 180º conduction half sine wave)
Average on–state current
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
One cycle Non Repetitive surge current ( Half Cycle, 50Hz)
I²t Value for fusing
Critical rate of rise of turned – on current (I
Peak gate current
Average gate power dissipation
(Tc = 105℃, 180º conduction half sine wave)
ABSOLUTE MAXIMUM RATINGS
V
DRM
Symbol
I
T(RMS)
I
T(AV)
V
TM
/ V
RRM
IP Semiconductor Co., Ltd.
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
(t
p = 10ms, Half Cycle)
Value
≤ 1.6
600
12
Parameter
8
t
Tj = 125℃
p = 20us, Tj = 125℃
G
= 2 X I
Tj = 25℃
Unit
Tj = 25℃
Tj = 25℃
Tj = 25℃
A
A
V
V
GT,
Tj = 125℃)
Symbol
I
P
T(RMS)
V
V
V
V
I
Tstg
dI/dt
I
T(AV)
I
G(AV)
TSM
DRM
RRM
DSM
RSM
GM
Tj
I²t
IPS612-xxB
TO-220B
-40 to +150
-40 to +110
Value
600
600
700
700
140
12
98
50
8
4
1
Unit
A/us
A²s
W
A
A
V
V
A
A
1

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IPS612-05B Summary of contents

Page 1

... IP Semiconductor Co., Ltd. IPS612 series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. High current density due to double mesa technology SIPOS and Glass passivation technology used has reliable operation up to 125℃ junction temperature. Low Igt parts available. ...

Page 2

... Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com ( ℃ unless otherwise specified) = rated value) DRM gate open Tj = 125 ℃ 25℃ 25℃ DRM Tj = 125℃ RRM Parameter TO-220B IPS612-xxB IPS612-xxB 05 MAX 5 MAX 1.3 MAX 0.2 MAX 30 MAX 15 MIN 40 ...

Page 3

... PACKAGE MECHANICAL DATA TO-220B 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPS612-xxB Millimeters Min Typ Max A 4.4 4.6 B 0.61 0.88 C 0.46 0.70 C2 1.23 1.32 C3 2.4 2.72 D 8.6 9.7 E 9.8 10.4 F 6.2 6.6 G 4.8 5 29.8 L1 3.75 L2 1.14 1.7 L3 2.65 2.95 V 40º 3 ...

Page 4

... Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPS612-xxB 4 ...

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