IPS812-05B IPS [IP SEMICONDUCTOR CO., LTD.], IPS812-05B Datasheet

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IPS812-05B

Manufacturer Part Number
IPS812-05B
Description
silicon controlled rectifiers
Manufacturer
IPS [IP SEMICONDUCTOR CO., LTD.]
Datasheet
1.IPS812-05B.pdf (4 pages)
IPS812 series of silicon controlled rectifiers are
specifically designed for medium power switching and
phase control applications.
High current density due to double mesa technology
SIPOS and Glass passivation technology used has
reliable operation up to 125℃ junction temperature.
Low Igt parts available.
applications, a high gate sensitivity is required.
IPS812 series are suitable for general purpose
MAIN FEATURES
ABSOLUTE MAXIMUM RATINGS
RMS on–state current (Tc = 105℃, 180º conduction half sine wave)
Average on–state current
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
One cycle Non Repetitive surge current ( Half Cycle, 50Hz)
I²t Value for fusing
Critical rate of rise of turned – on current (I
Peak gate current
Average gate power dissipation
V
(Tc = 105℃, 180º conduction half sine wave)
DRM
Symbol
I
T(RMS)
I
T(AV)
V
TM
/ V
IP Semiconductor Co., Ltd.
RRM
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
(t
p = 10ms, Half Cycle)
Value
≤ 1.6
800
12
Parameter
8
t
Tj = 125℃
p = 20us, Tj = 125℃
Tj = 25℃
Tj = 25℃
G
= 2 X I
Unit
Tj = 25℃
Tj = 25℃
A
A
V
V
GT,
Tj = 125℃)
Symbol
I
P
T(RMS)
V
V
V
V
I
Tstg
dI/dt
I
T(AV)
I
G(AV)
TSM
DRM
RRM
DSM
RSM
I²t
GM
Tj
IPS812-xxB
TO-220B
-40 to +150
-40 to +110
Value
800
800
900
900
140
12
98
50
8
4
1
Unit
A/us
A²s
℃
W
A
A
A
A
V
V
1

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IPS812-05B Summary of contents

Page 1

... IP Semiconductor Co., Ltd. IPS812 series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. High current density due to double mesa technology SIPOS and Glass passivation technology used has reliable operation up to 125℃ junction temperature. Low Igt parts available. ...

Page 2

... Junction to case th 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com = rated value) DRM gate open Tj = 125 ℃ 25℃ 25℃ DRM Tj = 125℃ RRM Parameter TO-220B IPS812-xxB IPS812-xxB 05 MAX 5 MAX 1.3 MAX 0.2 MAX 30 MAX 15 MIN 40 200 ...

Page 3

... PACKAGE MECHANICAL DATA TO-220B 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPS812-xxB Millimeters Min Typ Max A 4.4 4.6 B 0.61 0.88 C 0.46 0.70 C2 1.23 1.32 C3 2.4 2.72 D 8.6 9.7 E 9.8 10.4 F 6.2 6.6 G 4.8 5 29.8 L1 3.75 L2 1.14 1.7 L3 2.65 2.95 V 40º 3 ...

Page 4

... Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPS812-xxB 4 ...

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