BTS6142D_07 INFINEON [Infineon Technologies AG], BTS6142D_07 Datasheet
![no-image](/images/no-image-200.jpg)
BTS6142D_07
Related parts for BTS6142D_07
BTS6142D_07 Summary of contents
Page 1
...
Page 2
Table of Contents Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 3
Smart High-Side Power Switch PROFET Product Summary The BTS 6142D is a one channel high-side power switch in PG-TO252-5-11 package providing embedded protective functions including ™ ReverSave . The power transistor is built by a N-channel vertical power MOSFET with ...
Page 4
Protective Functions ™ • ReverSave , channel switches on in case of reverse polarity • Reverse battery protection without external components • Short circuit protection with latch • Over-load protection • Multi-step current limitation • Thermal shutdown with restart • ...
Page 5
Overview The BTS 6142D is a one channel high-side power switch (12 mΩ) in PG-TO252-5-11 power package providing embedded protective functions including ReverSave TM ReverSave is a protection feature that causes the power transistors to switch on in case ...
Page 6
Terms Following figure shows all terms used in this data sheet bIN bIS Figure 2 Terms Data Sheet Smart High-Side Power Switch VBB IN BTS ...
Page 7
Pin Configuration 2.1 Pin Assignment BTS 6142D Figure 3 Pin Configuration PG-TO252-5-11 2.2 Pin Definitions and Functions Pin Symbol 1 OUT Tab OUT 1) Not shorting all outputs will considerably increase ...
Page 8
Electrical Characteristics 3.1 Maximum Ratings Stresses above the ones listed here may cause permanent damage to the device. Exposure to maximum rating conditions for extended periods may affect device reliability °C (unless otherwise specified Pos. ...
Page 9
T j Pos. Parameter ESD Susceptibility 3.1.14 ESD susceptibility HBM 1) Short circuit is defined as a combination of remaining resistances and inductances. See 2) Load Dump is specified in ISO 7637 ...
Page 10
Block Description and Electrical Characteristics 4.1 Power Stages The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump. 4.1.1 Input Circuit Figure 4 shows the input circuit of the BTS 6142D. The current source ...
Page 11
Output On-State Resistance R The on-state resistance T temperature . Figure 6 j The on-state resistance in reverse polarity mode is described Ω Figure 6 Typical On-State Resistance At small load ...
Page 12
25°C j Figure 7 Typical Output Voltage Drop Limitation 4.1.3 Output Inductive Clamp When switching off inductive loads, the output voltage potential due to the involved inductance ( -d V Figure 8 ...
Page 13
V OUT OUT(CL Figure 9 Switching an Inductance Maximum Load Inductance While de energizing inductive loads, energy has to be dissipated in the BTS 6142D. This energy can be calculated via the following equation: ⋅ ...
Page 14
≤ 150° j(o) Figure 10 Maximum load inductance for single pulse, Data Sheet Smart High-Side Power Switch , T j,Start 14 BTS 6142D Power Stages = 150°C V1.1, 2007-02-28 ...
Page 15
Electrical Characteristics = 25 °C (unless otherwise specified Pos. Parameter General 4.1.1 Operating voltage 4.1.2 Undervoltage 1) shutdown 4.1.3 Undervoltage restart of charge pump 4.1.4 Operating current 4.1.5 Stand-by current = -40 ...
Page 16
Pos. Parameter 4.1.11 Output clamp 4.1.12 Inverse current output 1) 4) voltage drop (Tab to pin 1 and ° 150 °C ...
Page 17
Protection Functions The device provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed ...
Page 18
V detection ON(SC > V ONx I Lx(SC d(SC1) Figure 12 Overload Behavior 4.2.2 Short circuit impedance The capability to handle single short circuit events depends on the battery voltage ...
Page 19
R IN Figure 14 Reverse battery protection Additional power is dissipated by the integrated R estimation of overall power dissipation For reverse battery voltages connected to signal ground. This can be achieved e.g. by using a small ...
Page 20
Over-Voltage Protection Beside the output clamp for the power stage as described in clamp mechanism implemented for all logic pins. See Figure 15 Over-Voltage Protection 4.2.5 Loss of Ground Protection In case of complete loss of the device ground ...
Page 21
Electrical Characteristics = +25 °C (unless otherwise specified Pos. Parameter Over-Load Protection 4.2.1 Load current limitation = -40 ° +25 ° +150 ° 4.2.2 ...
Page 22
Pos. Parameter Reverse Battery 4.2.10 On-State resistance in case of reverse polarity V T =-8V, =25° =-8V, =150° =-12V, ...
Page 23
Diagnosis For diagnosis purpose, the BTS 6142D provides an IntelliSense signal at the pin IS. The pin IS provides during normal operation a sense current, which is proportional to the load current as long as V b,IS During switch-on ...
Page 24
H = “High” Level “Low” Level high impedance, potential depends on external circuit 2) V Low ohmic short to may reduce the output current bb The accuracy of the provided current sense ratio ( current. ...
Page 25
<1V typ IS(lim IS2 I 0.9*I IS1 IS1 t t son(IS) slc(IS) Figure 19 Timing of Diagnosis Signal in ON-state ...
Page 26
Electrical Characteristics = 25 °C (unless otherwise specified Pos. Parameter Load Current Sense 4.3.1 Current sense ratio, static on-condition I =30A L I =7. =2. =0. ...
Page 27
Package Outlines BTS 6142D PG-TO252-5-11 (Plastic Dual Small Outline Package) G reen Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green ...
Page 28
Revision History Version Date Changes V1.1 07-02-28 RoHS compliant version of BTS 6142D changed IFX logo page 3: Ordering code removed page 3: “AEC qualified” and “RoHS” logos added page 3, page 27: “AEC Stress Test Qualification” and “Green ...
Page 29
Edition 2007-02-28 Published by Infineon Technologies AG, 81726 Munich, Germany © Infineon Technologies AG 3/1/07. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). ...
Page 30
Published by Infineon Technologies AG ...