SG6509 MICROSEMI [Microsemi Corporation], SG6509 Datasheet - Page 2

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SG6509

Manufacturer Part Number
SG6509
Description
DIODE ARRAY CIRCUITS
Manufacturer
MICROSEMI [Microsemi Corporation]
Datasheet
6/90 Rev 1.1 2/94
Copyright
ABSOLUTE MAXIMUM RATINGS
Breakdown Voltage (V
Output Current (I
Note 1. Exceeding these ratings could cause damage to the device.
Note 2. Applicable for each diode.
THERMAL DATA
J Package:
F Package (10 Pin):
F Package (14 Pin):
RECOMMENDED OPERATING CONDITIONS
Operating Ambient Temperature Range
Note 3. Range over which the device is functional.
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply for the operating temperature of T
are used which maintains junction and case temperatures equal to the ambient temperature.)
Note 4. The parameters, although guaranteed, are not 100% tested in production.
Breakdown Voltage (V
Forward Voltage (V
Reverse Current (I
Capacitance (C)
Forward Recovery Time (t
Reverse Recovery Time (t
Continuous ................................................................
Thermal Resistance-
Thermal Resistance-
Thermal Resistance-
Thermal Resistance-
Thermal Resistance-
Thermal Resistance-
SG5768 .......................................................... -55 C to 150 C
SG5770 .......................................................... -55 C to 150 C
SG5772 .......................................................... -55 C to 150 C
(Note 4)
(Note 4)
1994
Parameter
O
(Note 4)
), T
R
F
)
C
)
BR
Junction to Case
Junction to Ambient
Junction to Case
Junction to Ambient
Junction to Case
Junction to Ambient
= 25°C
BR
) ...................................................
)
fr
rr
)
)
I
Duty Cycle
I
I
I
I
V
V
V
I
I
R
F
F
F
F
F
F
R
R
R
= 100mA
= 200mA
= 500mA
= 10mA, T
= 500mA, t
= I
= 10 A
= 40V
= 40V, T
= 0V, f = 1MHz, Pin-to-pin
,
,
,
R
(Note 1 & 2)
JC
,
JC
,
JC
,
= 200mA, i
.................. 30°C/W
.................. 80°C/W
.................. 80°C/W
JA
JA
JA
.............. 80°C/W
............ 145°C/W
............ 140°C/W
A
A
r
= 150°C
2%, 300 µs pulse
= -55°C
15ns, V
rr
= 20mA, R
(Note 3)
500mA
fr
Test Conditions
60V
= 1.8V, R
L
2
= 100
Note A. Junction Temperature Calculation: T
Note B. The above numbers for
Operating Junction Temperature
Storage Temperature Range ............................
Operating Ambient Temperature Range
S
Hermetic (J, F Packages) ............................................
SG5774 .......................................................... -55 C to 150 C
SG6506 .......................................................... -55 C to 150 C
SG6507 .......................................................... -55 C to 150 C
SG6508 .......................................................... -55 C to 150 C
SG6509 .......................................................... -55 C to 150 C
= 50
thermal resistance of the package in a standard mount-
ing configuration. The
guidelines for the thermal performance of the device/pc-
board system. All of the above assume no ambient
airflow.
A
= 25 C for each diode. Low duty cycle pulse testing techniques
DIODE ARRAY SERIES
11861 Western Avenue
JC
JA
are maximums for the limiting
Min. Typ. Max.
numbers are meant to be
SG5768/SG6506
60
L
INFINITY Microelectronics Inc.
(714) 898-8121
J
= T
A
+ (P
Garden Grove, CA 92841
-65 C to 200 C
100
1.0
1.1
1.5
1.0
50
40
20
D
4
FAX: (714) 893-2570
x
JA
).
Units
150 C
nA
ns
pf
V
V
V
V
V
A

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