SG6509 MICROSEMI [Microsemi Corporation], SG6509 Datasheet - Page 3

• Manufacturer Part Number: SG6509
• Description: DIODE ARRAY CIRCUITS
• Manufacturer: MICROSEMI [Microsemi Corporation]

6/90 Rev 1.1 2/94
Copyright
ELECTRICAL CHARACTERISTICS
Breakdown Voltage (V
Forward Voltage (V
Reverse Current (I
Capacitance (C)
Forward Recovery Time (t
Reverse Recovery Time (t
Breakdown Voltage (V
Forward Voltage (V
Reverse Current (I
Capacitance (C)
Forward Recovery Time (t
Reverse Recovery Time (t
(Note 4)
(Note 4)
(Note 4)
(Note 4)
1994
Parameter
Parameter
(Note 4)
(Note 4)
R
R
F
F
)
)
)
)
BR
BR
)
)
fr
fr
rr
rr
)
)
)
)
I
Duty Cycle
I
I
I
I
V
V
V
I
I
I
Duty Cycle
I
I
I
I
V
V
V
I
R
F
F
F
F
F
F
R
F
F
F
F
F
R
R
R
R
R
R
= 100mA
= 200mA
= 500mA
= 10mA, T
= 500mA, t
= 100mA
= 200mA
= 500mA
= 10mA, T
= 500mA, t
= I
= 10 A, 100ms pulse,
= 10 A, 100ms pulse,
= 40V
= 40V, T
= 0V, f = 1MHz, Pin-to-pin
= 40V
= 40V, T
= 0V, f = 1MHz, Pin-to-pin
R
= 200mA, i
(continued)
A
A
A
A
r
r
= 150°C
= 150°C
2%, 300µs pulse
2%, 300 µs pulse
= -55°C
= -55°C
15ns, V
15ns, V
rr
= 20mA, R
fr
fr
Test Conditions
Test Conditions
= 1.8V, R
= 1.8V, R
20% Duty Cycle
20% Duty Cycle
L
3
= 100
S
S
= 50
= 50
DIODE ARRAY SERIES
11861 Western Avenue
Min. Typ. Max.
Min.
SG5770/SG6507
SG5772/SG6508
SG5774/SG6509
60
60
L
INFINITY Microelectronics Inc.
[phone]
Typ.
7
7
Garden Grove, CA 92841
Max.
100
100
1.0
1.1
1.5
1.0
1.0
1.1
1.5
1.0
50
40
20
50
40
20
8
8
FAX: [phone]
Units
Units
nA
ns
ns
nA
ns
ns
pf
pf
V
V
V
V
V
V
V
V
V
V
A
A