TSI200B1 STMICROELECTRONICS [STMicroelectronics], TSI200B1 Datasheet - Page 7

• Manufacturer Part Number: TSI200B1
• Description: TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

ELECTRICAL CHARACTERISTICS (T
1 - PROTECTION DEVICES PARAMETERS
Note 1 : Measured at 50 Hz, one cycle
Note 2 : See test cricuit
Note 3 : V R = 0V, F = 1MHz, between pins 1 and 8.
2 - DIODE BRIDGE PARAMETERS
FUNCTIONAL HOLDING CURRENT (I
TSI180B1
TSI200B1
TSI220B1
TSI265B1
TSI62B1
(for one diode)
TEST PROCEDURE :
This is a GO-NOGO Test which allows to confirm the holding current (I
test circuit.
Type
1) Adjust the current level at the I
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 s.
3) The D.U.T will come back off-state within a duration of 50 ms max.
Symbol
V
V
F
BAT
= - 48 V
max.
1
5
1
5
1
5
1
5
1
5
I
A
RM
@ V
I
I
F
F
= 20 mA
= 100 mA
RM
180
200
220
265
50
62
50
50
50
50
V
R
amb
H
H
) TEST CIRCUIT : GO - NO GO TEST
V
value by short circuiting the D.U.T.
BO
= 25 °C)
note1
max.
Test condition
250
290
330
380
90
V
@ I
BO
D.U.T.
note2
min.
150
150
150
150
150
mA
I
H
H
) level in a functional
min.
mA
50
50
50
50
50
Surge generator
note1
I
BO
Value
0.9
1.1
max.
400
400
400
400
400
mA
- V
P
TSIxxB1
note3
Unit
200
200
200
200
200
typ.
pF
C
V
V
7/9