FLC257MH-8 FUJITSU [Fujitsu Component Limited.], FLC257MH-8 Datasheet
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FLC257MH-8
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FLC257MH-8 Summary of contents
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... High PAE: η add = 35%(Typ.) • ProvenReliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...
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... FLC257MH-8 C-Band Power GaAs FET POWER DERATING CURVE 100 150 200 Case Temperature (°C) OUTPUT POWER vs. INPUT POWER +10V ≈ 0.6 I DSS f = 8.5 GHz 33 P out Input Power (dBm) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE ...
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... Download S-Parameters, click here 3 FLC257MH-8 C-Band Power GaAs FET S 21 +90° 7 6GHz 8.5 8.5 9 0° .02 .04 .06 .08 -90° S22 MAG ANG .344 -157.2 .778 -174.5 ...
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... FLC257MH-8 C-Band Power GaAs FET 2-ø1.8±0.15 (0.071) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...