HA44 HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD], HA44 Datasheet

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HA44

Manufacturer Part Number

HA44

Description

NPN SILICON TRANSISTOR

Manufacturer

HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Datasheet

1.HA44.pdf (1 pages)

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Company

Part Number

Manufacturer

Quantity

Price

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Bonase Electronics (HK) Co., Limited

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HA4404AC

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Meier Automation Equipment Co., Limited

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Meier Automation Equipment Co., Limited

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Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

HA4404BCB

Manufacturer:

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Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

HA4404BCB

Manufacturer:

INTERSIL

Quantity:

20 000

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H

H

H

H

V

V

V

V

BV

BV

BV

Symbol

█ ELECTRICAL CHARACTERISTICS（T

FE（1）

FE（2）

FE（3）

FE（4）

CE(sat1)

CE(sat2)

CE(sat3)

I

I

I

Cob

BE(sat)

CBO

EBO

CES

T

T

P

V

V

V

I

█ ABSOLUTE MAXIMUM RATINGS（T

█ HIGH VOLTAGE TRANSISTOR

C

CBO

CEO

EBO

C

stg

j

CBO

CEO

EB O

——Collector Current……………………………………300mA

——Junction Temperature…………………………………150℃

——Collector Dissipation…………………………………625mW

——Storage Temperature………………………… -55~150℃

——Collector-Emitter Voltage……………………………400V

——Collector-Base Voltage………………………………500V

——Emitter-Base Voltage………………………………6V

Shantou Huashan Electronic Devices Co.,Ltd.

Collector- Emitter Saturation Voltage

Collector-Emitter Breakdown Voltage

Base-Emitter Saturation Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Emitter-Base Cut-off Current

Collector Cut-off Current

Collector Cut-off Current

Output Capacitance

DC Current Gain

Characteristics

Min

500

400

40

60

45

40

6

7

a

a

=25℃）

=25℃）

Typ

0.75

0.75

Max

100

100

500

300

0.4

0.5

N P N S I L I C O N T R A N S I S T O R

Unit

nA

nA

nA

pF

V

V

V

V

V

V

V

TO-92

HA44

V

1―Emitter，E

2―Base，B

3―Collector， C

CB

V

V

V

I

V

I

I

I

V

I

C

=20V, I

CE

C

C

C

I

E

V

CE

CE

=1mA, I

C

CE

CE

=10mA, I

=50mA, I

=10mA, I

I

=100μA，I

Test Conditions

V

=10V, I

=100μA, I

C

CB

=10V, I

=10V, I

=-400V, V

=10V, I

=1mA, I

EB

=400V, I

=4V, I

E

=0， F=1MHz

B

C

C

C

=0.1mA

=100mA

C

B

B

B

=10mA

=50mA

B

=1mA

C

=1mA

=5mA

=1mA

=0

E

=0

E

BE

C

=0

=0

=0

=0

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