MC9S08LL16_10 FREESCALE [Freescale Semiconductor, Inc], MC9S08LL16_10 Datasheet - Page 40

• Manufacturer Part Number: MC9S08LL16_10
• Description: MC9S08LL16 Series
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

Electrical Characteristics
3.15
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
3.15.1
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell
method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed
with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test
software. The radiated emissions from the microcontroller are measured in a TEM cell in two package
orientations (North and East).
40
1
2
3
4
5
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
The program and erase currents are additional to the standard run I
with V
Typical endurance for FLASH
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
Typical data retention
to 25C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please
refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
The frequency of this clock is controlled by a software setting.
C
D
D
D
D
P
P
P
P
D
D
C
C
DD
EMC Performance
Supply voltage for program/erase
-40C to 85C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
Page erase current
Program/erase endurance
Data retention
= 3.0 V, bus frequency = 4.0 MHz.
Radiated Emissions
T
T = 25C
L
to T
H
= –40C to + 85C
values are based on intrinsic capability of the technology measured at high temperature and de-rated
Characteristic
5
2
2
3
was evaluated for this product family on the 9S12Dx64. For additional information on how
3
1
4
MC9S08LL16 Series MCU Data Sheet, Rev. 6
2
Table 20. Flash Characteristics
2
V
Symbol
RI
RI
prog/erase
V
f
t
t
t
t
t
t
FCLK
D_ret
Burst
Page
Mass
Fcyc
Read
prog
DDBP
DDPE
DD
10,000
. These values are measured at room temperatures
Min
150
1.8
1.8
—
—
15
5
100,000
Typical
20,000
4000
100
—
9
4
4
6
Freescale Semiconductor
Max
6.67
200
3.6
3.6
—
—
—
—
—
cycles
years
t
t
t
t
Unit
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
s
V
V