MC9S12A128 MOTOROLA [Motorola, Inc], MC9S12A128 Datasheet - Page 72

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MC9S12A128

Manufacturer Part Number
MC9S12A128
Description
Microcontroller unit (MCU)
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet

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A.3.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The failure rates for data retention and program/erase cycling are specified at the operating conditions
noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
Conditions are shown in
Num C
1
2
NOTE:
NOTE:
NOTE:
NOTE:
C Flash/EEPROM (–40 to + 85°C)
C EEPROM (–40 to + 85°C)
All values shown in
characterization.
Flash cycling performance is 1000 cycles at –40 to +85 C. Data Retention is
specified for 10 years.
EEPROM cycling performance is 10,000 cycles at –40 to +85 C. Data retention is
specified for 10 years.
These figures are provided for commercial quality levels not automotive.
Table A-4
Table A-12 NVM Reliability Characteristics
unless otherwise noted
NVM Array
Table A-12
are target values and subject to further extensive
MC9S12A128 Device Guide — V01.01
Cycles
10,000
1000
Data Retention
Lifetime
10 years
10 years
72

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