MCF5329DS ANALOGICTECH [Advanced Analogic Technologies], MCF5329DS Datasheet - Page 17

• Manufacturer Part Number: MCF5329DS
• Description: MCF5329 ColdFire Microprocessor Data Sheet
• Manufacturer: ANALOGICTECH [Advanced Analogic Technologies]

For most applications P
P
Solving equations 1 and 2 for K gives:
where K is a constant pertaining to the particular part. K can be determined from
P
solving
5.3
5.4
Freescale Semiconductor
I/O
D
Core Supply Voltage
PLL Supply Voltage
CMOS Pad Supply Voltage
Mobile DDR/Bus Pad Supply Voltage
DDR/Bus Pad Supply Voltage
SDR/Bus Pad Supply Voltage
USB Supply Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Mobile DDR/Bus Input High Voltage
Mobile DDR/Bus Input Low Voltage
DDR/Bus Input High Voltage
DDR/Bus Input Low Voltage
(at equilibrium) for a known T
is neglected) is:
Equation 1
ESD Protection
DC Electrical Specifications
NOTES:
1
2
ESD Target for Human Body Model
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for
Automotive Grade Integrated Circuits.
A device is defined as a failure if after exposure to ESD pulses the device no longer meets
the device specification requirements. Complete DC parametric and functional testing is
performed per applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
and
I/O
Equation 2
Characteristic
Characteristics
< P
MCF5329 ColdFire
INT
Table 6. ESD Protection Characteristics
K
and can be ignored. An approximate relationship between P
A
Table 7. DC Electrical Specifications
iteratively for any value of T
. Using this value of K, the values of P
=
P
D
×
P
(
D
T
®
A
=
Microprocessor Data Sheet, Rev. 0.1
×
-------------------------------- -
(
Preliminary
T
273°C
J
+
K
273°C
)
+
Symbol
HBM
Q
)
JMA
×
USBV
Symbol
PLLV
SDV
P
SDV
SDV
SDV
SDV
SDV
SDV
EV
IV
EV
A
EV
2
D
.
DD
DD
IH
IL
DD
DD
DD
DD
IH
IH
IL
IL
DD
Value
2000
1, 2
Preliminary Electrical Characteristics
D
-0.05
-0.05
-0.05
1.65
2.25
TBD
Min
1.4
1.4
3.0
3.0
3.0
and T
2
2
Equation 3
J
Units
can be obtained by
SDV
SDV
V
EV
DD
DD
DD
TBD
Max
1.95
2.75
1.6
1.6
3.6
3.6
3.6
0.8
0.8
+ 0.05
+ 0.05
+ 0.05
by measuring
D
and T
Unit
Eqn. 2
Eqn. 3
V
V
V
V
V
V
V
V
V
V
V
V
V
J
(if
17