BD539B POINN [Power Innovations Ltd], BD539B Datasheet

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BD539B

Manufacturer Part Number
BD539B
Description
NPN SILICON POWER TRANSISTORS
Manufacturer
POINN [Power Innovations Ltd]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BD539B
Manufacturer:
POWER
Quantity:
20 000
Part Number:
BD539B.
Manufacturer:
ST
0
Copyright © 1997, Power Innovations Limited, UK
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
P R O D U C T
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
Collector-base voltage
Collector-emitter voltage (see Note 1)
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
Designed for Complementary Use with the
BD540 Series
45 W at 25°C Case Temperature
5 A Continuous Collector Current
Up to 120 V V
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
CEO
I N F O R M A T I O N
rating
RATING
BD539, BD539A, BD539B, BD539C, BD539D
B
C
E
Pin 2 is in electrical contact with the mounting base.
NPN SILICON POWER TRANSISTORS
BD539
BD539A
BD539B
BD539C
BD539D
BD539
BD539A
BD539B
BD539C
BD539D
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
JUNE 1973 - REVISED MARCH 1997
V
V
V
T
P
P
CBO
CEO
EBO
T
T
I
T
stg
C
tot
tot
A
L
j
1
2
3
-65 to +150
-65 to +150
-65 to +150
VALUE
100
120
100
120
260
40
60
80
40
60
80
45
5
5
2
MDTRACA
UNIT
°C
°C
°C
°C
W
W
V
V
V
A
1

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BD539B Summary of contents

Page 1

... Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Pin electrical contact with the mounting base ...

Page 2

... BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER Collector-emitter (BR)CEO C breakdown voltage (see Note Collector-emitter I V CES CE cut-off current Collector cut-off ...

Page 3

... I - Collector Current - A C Figure BD539, BD539A, BD539B, BD539C, BD539D TYPICAL CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE TCS631AH 25° 80°C C 1·0 0·1 0·01 1· ...

Page 4

... BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 0· MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 1·0 0·1 BD539 BD539A BD539B BD539C BD539D 1· ...

Page 5

... NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm BD539, BD539A, BD539B, BD539C, BD539D MECHANICAL DATA 2,95 2,54 6,6 6,0 ...

Page 6

... BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current ...

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