M40Z300MH1E STMICROELECTRONICS [STMicroelectronics], M40Z300MH1E Datasheet - Page 12

• Manufacturer Part Number: M40Z300MH1E
• Description: 5V or 3V NVRAM supervisor for up to 8 LPSRAMs
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1µF (as shown in
Figure
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, STMicroelectronics recommends
connecting a schottky diode from V
Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is
recommended for surface mount.
Figure 7.
7) is recommended in order to provide the needed filtering.
Supply voltage protection
V CC
0.1 F
CC
CC
to V
that drive it to values below V
SS
(cathode connected to V
V CC
V SS
DEVICE
AI00622
CC
SS
, anode to V
by as much as
SS
).