M40Z300MH1E STMICROELECTRONICS [STMicroelectronics], M40Z300MH1E Datasheet - Page 15

• Manufacturer Part Number: M40Z300MH1E
• Description: 5V or 3V NVRAM supervisor for up to 8 LPSRAMs
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Table 6.
1. Valid for ambient operating temperature: T
2. Outputs deselected.
3. For RST & BL pins (open drain).
4. Chip enable outputs (E1
5. Measured with V
I
V
I
I
V
Sym
V
CCDR
THS
I
OUT1
OUT2
V
V
V
LI
I
V
V
OHB
CC
PFD
BAT
OH
OL
SO
IH
noted).
Higher leakage currents will reduce battery life.
(2)
IL
Input leakage current
Supply current
Input low voltage
Input high voltage
Output low voltage
Output low voltage
(open drain)
Output high voltage
V
V
V
back-up)
Data retention mode
current
Threshold select
voltage
Power-fail deselect
voltage (THS = V
Power-fail deselect
voltage (THS = V
Battery back-up
switchover voltage
Battery voltage
OH
OUT
OUT
battery back-up
DC characteristics
current (active)
current (battery
Parameter
(5)
OUT
(3)
and E1
CON
SS
OUT
)
(4)
CON
)
- E4
CON
- E4
Test condition
V
V
V
0V
I
OUT
OUT
OUT
OUT2
Outputs open
I
) can only sustain CMOS leakage currents in the battery back-up mode.
CON
OH
I
I
OL
OL
= –2.0mA
> V
> V
> V
V
= 4.0mA
open.
= 10mA
A
= –1.0µA
IN
= 0 to 70°C or –40 to 85°C; V
BAT
CC
CC
V
–0.3
–0.2
–0.3
CC
(1)
–0.3
Min
V
2.2
2.4
2.0
4.5
4.2
2.0
SS
4.35
M40Z300
Typ
100
2.9
4.6
3.0
2.9
3
CC
V
CC
V
= 2.7 to 3.6V or 4.5 to 5.5V (except where
Max
4.75
250
150
100
0.8
0.4
0.4
3.6
4.5
3.6
±1
OUT
6
+ 0.3
–0.3
Min
V
2.0
2.4
2.0
2.8
2.5
2.0
SS
M40Z300W
Typ
100
2.9
2.9
2.6
2.5
2.9
2
V
CC
V
Max
150
100
100
0.8
0.4
0.4
3.6
3.0
2.7
3.6
±1
OUT
4
+ 0.3
Unit
mA
mA
mA
µA
µA
nA
15/25
V
V
V
V
V
V
V
V
V
V
V