M40SZ100WMH6E STMICROELECTRONICS [STMicroelectronics], M40SZ100WMH6E Datasheet - Page 17

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M40SZ100WMH6E

Manufacturer Part Number
M40SZ100WMH6E
Description
5 V or 3 V NVRAM supervisor for LPSRAM
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
M40SZ100Y, M40SZ100W
Table 7.
1. Valid for ambient operating temperature: T
2. Measured with V
3. RSTIN internally pulled-up to V
4. Outputs deselected.
5. External SRAM must match SUPERVISOR chip V
6. For rechargeable backup, V
7. For PFO pin (CMOS).
8. Chip enable output (E
9. For RST & BL pins (open drain).
I
OUT1
I
I
I
V
V
Sym
V
CCDR
I
OUT2
V
LO
V
V
V
I
V
LI
V
OHB
will reduce battery life.
PFD
CC
BAT
OH
PFI
SO
OL
IH
(3)
IL
(4)
(5)
Supply current
Data retention mode
current
Input leakage current
Input leakage current
(PFI)
Output leakage current
V
V
backup)
Battery voltage
Input high voltage
Input low voltage
Output high voltage
V
Output low voltage
Output low voltage
(open drain)
Power-fail deselect
voltage
PFI input threshold
PFI hysteresis
Battery backup
switchover voltage
OUT
OUT
OH
DC characteristics
battery backup
current (active)
current (battery
Parameter
(2)
OUT
(9)
and E
CON
) can only sustain CMOS leakage currents in the battery backup mode. Higher leakage currents
CON
BAT
(7)
(8)
CC
open.
(max) may be considered V
through 100 kΩ resistor.
V
0 V ≤ V
V
Test condition
0 V ≤ V
I
OUT
OUT
OUT2
I
Outputs open
V
V
OH
I
I
OL
OL
CC
CC
PFI rising
A
> V
= –1.0 mA
> V
= 3.0 mA
= 10 mA
= –40 to 85 °C; V
= –1.0 µA
= 5 V(Y)
= 3 V(V)
OUT
IN
BAT
CC
≤ V
≤ V
CC
Doc ID 7528 Rev 3
– 0.3
– 0.3
CC
specification (3 V or 5 V).
CC
(1)
0.7V
1.225
CC
–0.3
4.20
Min
–25
2.5
2.4
2.5
CC
– 0.5 V.
CC
= 2.7 to 3.6 V or 4.5 to 5.5 V(except where noted).
M40SZ100Y
Typ
3.0
2.9
4.4
1.2
2.5
50
50
20
2
0
V
0.3V
CC
1.275
3.5
Max
4.50
200
175
100
3.5
0.4
0.4
±1
25
±1
70
1
+ 0.3
(6)
CC
0.7V
1.225
2.55
–0.3
Min
–25
2.5
2.4
2.5
DC and AC parameters
CC
M40SZ100W
2.60
1.25
Typ
3.0
2.9
2.5
50
20
2
0
V
0.3V
CC
1.275
3.5
Max
2.70
200
100
100
0.5
3.5
0.4
0.4
±1
25
±1
70
+ 0.3
(6)
CC
17/24
Unit
mA
mA
mV
nA
µA
nA
µA
µA
V
V
V
V
V
V
V
V
V
V

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