M40SZ100Y_07 STMICROELECTRONICS [STMicroelectronics], M40SZ100Y_07 Datasheet - Page 11

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M40SZ100Y_07

Manufacturer Part Number
M40SZ100Y_07
Description
5V or 3V NVRAM supervisor for LPSRAM
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Figure 7.
Table 2.
1. Valid for ambient operating temperature: T
2. V
3. V
Symbol
t
t
V
t
t
t
t
t
FB
CER
REC
WPT
PFD
EPD
t
F
PFD
CC
PFD
t
RB
(2)
R
(3)
passes V
(max) to V
(min) to V
V CC
V PFD (max)
V PFD
V PFD (min)
E
E CON
RST
V SO
PFO
V
V
PFI to PFO propagation delay
V
Chip enable propagation delay (low or high)
V
Chip enable recovery
V
Write protect time
PFD
PFD
PFD
SS
PFD
Power up timing
Power down/up AC characteristics
PFD
to V
SS
(min) to V
PFD
(max) to V
(min) to V
(max) to RST high
(min).
fall time of less than t
PFD
(min) fall time of less than t
(min) V
tRB
PFD
SS
V OHB
PFD
V
(max) V
CC
CC
(min) V
fall time
rise time
FB
CC
CC
A
may cause corruption of RAM data.
Parameter
rise time
= –40 to 85°C; V
fall time
tR
F
may result in deselection/write protection not occurring until 200 µs after
tCER
tREC
(1)
CC
= 2.7 to 3.6V or 4.5 to 5.5V(except where noted).
M40SZ100W
M40SZ100Y
tEPD
VALID
Min
300
40
10
15
10
40
40
1
Max
120
200
200
25
10
15
AI03937
tEPD
Unit
ms
ms
µs
µs
µs
ns
ns
µs
µs
µs
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