M40SZ100Y_07 STMICROELECTRONICS [STMicroelectronics], M40SZ100Y_07 Datasheet - Page 17

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M40SZ100Y_07

Manufacturer Part Number
M40SZ100Y_07
Description
5V or 3V NVRAM supervisor for LPSRAM
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Figure 11. AC testing input/output waveforms
Table 6.
1. Sampled only, not 100% tested.
2. At 25°C, f = 1MHz.
3. Outputs deselected.
Table 7.
I
OUT1
I
I
I
V
Sym
V
CCDR
Symbol
I
OUT2
V
C
LO
V
V
I
LI
V
OHB
CC
BAT
OH
OL
OUT
IH
(3)
IL
C
(4)
(5)
IN
(3)
Supply current
Data retention mode
current
Input leakage current
Input leakage current
(PFI)
Output leakage current
V
V
back-up)
Battery voltage
Input high voltage
Input low voltage
Output high voltage
V
Output low voltage
Output low voltage
(open drain)
OUT
OUT
OH
Input capacitance
Output capacitance
Capacitance
DC characteristics
battery back-up
current (active)
current (battery
Parameter
(2)
(9)
(7)
(8)
0.8V CC
0.2V CC
Parameter
V
V
Test condition
0V
0V
OUT
I
OUT
OUT2
I
Outputs open
OH
I
I
OL
OL
V
> V
> V
= –1.0mA
= 3.0mA
V
= 10mA
OUT
= –1.0µA
IN
(1)(2)
BAT
CC
V
– 0.3
– 0.3
V
CC
CC
(1)
0.7V
–0.3
Min
–25
2.5
2.4
2.5
CC
M40SZ100Y
Typ
3.0
2.9
50
2
V
0.3V
CC
3.5
Max
200
175
100
3.5
0.4
0.4
±1
25
±1
1
Min
+ 0.3
0.7V CC
0.3V CC
AI02568
(6)
CC
0.7V
–0.3
Min
–25
2.5
2.4
2.5
CC
M40SZ100W
Max
10
7
Typ
3.0
2.9
50
2
V
0.3V
CC
3.5
Max
200
100
100
0.4
0.5
3.5
0.4
±1
25
±1
+ 0.3
(6)
CC
Unit
pF
pF
17/25
Unit
mA
mA
nA
µA
nA
µA
µA
V
V
V
V
V
V
V

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