2SK3018UB ROHM [Rohm], 2SK3018UB Datasheet

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2SK3018UB

Manufacturer Part Number
2SK3018UB
Description
2.5V Drive Nch MOSFET
Manufacturer
ROHM [Rohm]
Datasheet
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
* Each terminal mounted on a recommended land.
Silicon N-channel MOSFET
1) Low on-resistance.
2) Low voltage drive(2.5V drive).
Switching
2SK3018UB
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Range of storage temperature
Channel to Ambient
 Structure
Features
 Application
 Packaging specifications
 Absolute maximum ratings (Ta = 25C)
 Thermal resistance
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2.5V Drive Nch MOSFET
2SK3018UB
Type
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Rth (ch-a)
Symbol
Symbol
Taping
3000
V
V
Tstg
TCL
Tch
I
P
DSS
GSS
I
DP
D
D
*1
*2
*
55 to 150
Limits
Limits
100
400
200
150
625
20
30
1/5
C / W
mW
Unit
Unit
mA
mA
C
C
V
V
 Dimensions (Unit : mm)
 Inner circuit
(1) Gate
(2) Source
(3) Drain
UMT3F
0.32
Abbreviated symbol : KN
0.65
(3)
(1)
1.3
2.0
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
0.65
(1)
(2)
Data Sheet
0.13
0.9
∗1
2011.10 - Rev.A
(3)
(2)
∗2

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2SK3018UB Summary of contents

Page 1

... Low on-resistance. 2) Low voltage drive(2.5V drive).  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) 2SK3018UB  Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Continuous Drain current Pulsed Power dissipation Channel temperature Range of storage temperature *1 Pw ...

Page 2

... Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage V Zero gate voltage drain current Gate threshold voltage V Static drain-source on-state R resistance Forward transfer admittance l Y Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time ...

Page 3

... Electrical characteristic curves 0. Ta=25°C Pulsed 3.5V 0.1 2. DRAIN-SOURCE VOLTAGE : V (V) DS Fig.1 Typical output characteristics 50 = Pulsed Ta=125°C 20 75°C 25°C 10 −25° 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 DRAIN CURRENT : I (A) D Fig.4 Static drain-source on-state resistance vs. drain current (Ι) ...

Page 4

... Ta=25°C Pulsed 100m 50m 20m =4V 10m 0.5m 0.2m 0.1m 0 0.5 1 SOURCE-DRAIN VOLTAGE : V (V) SD Fig.10 Reverse drain current vs. source-drain voltage (ΙΙ) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.   =25°C f=1MH 0.5 0.1 0.2 0 ...

Page 5

... Measurement circuits D.U. Fig.1-1 Switching Time Measurement Circuit  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. ...

Page 6

ROHM Co., Ltd. All rights reserved Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ Notice ...

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