2SK3113-Z NEC [NEC], 2SK3113-Z Datasheet

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2SK3113-Z

Manufacturer Part Number
2SK3113-Z
Description
SWITCHING N-CHANNEL POWER MOSFET
Manufacturer
NEC [NEC]
Datasheet

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Document No. D13336EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
• Low on-state resistance
• Low gate charge
• Gate voltage rating ±30 V
• Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
DESCRIPTION
a low gate charge and excellent switching characteristic, and
designed for high voltage applications such as switching
power supply, AC adapter.
FEATURES
R
Q
The 2SK3113 is N-channel DMOS FET device that features
DS(on)
G
= 9 nC TYP. (V
2. Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm
3. Starting T
= 4.4 Ω MAX. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
µ
ch
DD
s, Duty Cycle ≤ 1%
C
Note1
= 25°C, V
= 450 V, V
= 25°C)
GS
Note3
Note3
DS
C
A
GS
= 10 V, I
= 25°C)
= 25°C)
= 0 V)
= 0 V)
DD
GS
N-CHANNEL POWER MOS FET
= 150 V
D
Note2
= 10 V, I
= 1.0 A)
The mark
A
,
R
= 25°C)
D
G
I
D(pulse)
I
V
V
= 2.0 A)
D(DC)
E
= 25
P
P
T
DATA SHEET
T
I
DSS
GSS
AS
stg
AS
T1
T2
ch
SWITCHING
Ω,
shows major revised points.
V
GS
–55 to +150
MOS FIELD EFFECT TRANSISTOR
= 20 → 0 V
±2.0
±8.0
±30
150
600
1.0
2.0
2.7
20
ORDERING INFORMATION
PART NUMBER
mJ
2SK3113-Z
°C
°C
W
W
V
V
A
A
A
2SK3113
TO-252 (MP-3Z)
TO-251 (MP-3)
(TO-251)
(TO-252)
2SK3113
PACKAGE
1998, 2001

Related parts for 2SK3113-Z

2SK3113-Z Summary of contents

Page 1

... D(DC) I ±8.0 D(pulse Note2 P 1 150 ch T –55 to +150 stg → 150 Ω The mark shows major revised points. 2SK3113 PACKAGE 2SK3113 TO-251 (MP-3) 2SK3113-Z TO-252 (MP-3Z) (TO-251 (TO-252) W °C ° 1998, 2001 ...

Page 2

... 2 µ Q di/ TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ µ τ Duty Cycle ≤ 1% Data Sheet D13336EJ3V0DS 2SK3113 MIN. TYP. MAX. UNIT µ 100 A µ ±10 A 2.5 3.5 V 0.5 S 3.3 4.4 Ω 290 ...

Page 3

... T ˚C 1000 Single pulse Mounted on glass epoxy board 1 100 Pulse Width - s Data Sheet D13336EJ3V0DS 2SK3113 Mounted on glass epoxy board 1 100 120 140 160 - Case Temperature - ˚ 125˚ ...

Page 4

... ˚C 75 ˚C 1 125 ˚C 0.1 0.01 100 150 ˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 1 0.1 15 Data Sheet D13336EJ3V0DS 2SK3113 ˚C 75 ˚ ˚C ch −25 ˚ Pulsed Gate to Source Voltage - Pulsed 0.1 1 Drain Current - A ...

Page 5

... I - Drain Current - A D DYNAMIC INPUT/OUTPUT CHARACTERISTICS 800 600 V = 450 V DD 300 V 150 V 400 200 100 Gate Charge - nC G Data Sheet D13336EJ3V0DS 2SK3113 0 V Pulsed 1.0 1 150 Ω 2 ...

Page 6

... L - Inductive Load - H 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 120 100 Starting T - Starting Channel Temperature - ch Data Sheet D13336EJ3V0DS 2SK3113 V = 150 Ω → ≤ 2 100 125 150 ˚C ...

Page 7

... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2) TO-252 (MP-3Z) 6.5 ±0.2 5.0 ±0 1.1 ±0.2 2.3 2.3 Data Sheet D13336EJ3V0DS 2SK3113 2.3 ±0.2 0.5 ±0.1 3 0.9 0.8 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4 ...

Page 8

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK3113 M8E 02. 11-1 ...

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